Дискретные полупроводники · MOSFET транзисторы (одиночные)

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Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	IRFBG20	Vishay/Siliconix	MOSFET N-CH 1000V 1.4A TO-220AB Rds On (Max) @ Id, Vgs: 11 Ohm @ 840mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.4A · Input Capacitance (Ciss) @ Vds: 500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 54W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	from 0,00	Additional information Find at suppliers Buy in store
	IXTY1R4N100P	IXYS	MOSFET N-CH 1000V 1.4A TO-252 Серия: Polar™ · Rds On (Max) @ Id, Vgs: 11 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 17.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.4A · Input Capacitance (Ciss) @ Vds: 450pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 63W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	from 0,00	Additional information Find at suppliers Buy in store
	IRFBG20L	Vishay/Siliconix	MOSFET N-CH 1000V 1.4A TO-262 Rds On (Max) @ Id, Vgs: 11 Ohm @ 840mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.4A · Input Capacitance (Ciss) @ Vds: 500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 54W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	from 0,00	Additional information Find at suppliers Buy in store
	IXTA1R4N100P	IXYS	MOSFET N-CH 1000V 1.4A TO-263 Серия: Polar™ · Rds On (Max) @ Id, Vgs: 11 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 17.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.4A · Input Capacitance (Ciss) @ Vds: 450pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 63W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	from 0,00	Additional information Find at suppliers Buy in store
	IXT-1-1N100S1-TR	IXYS	MOSFET N-CH 1000V 1.5A 8-SOIC Drain to Source Voltage (Vdss): 1000V (1kV) · Current - Continuous Drain (Id) @ 25° C: 1.5A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: 8-SOIC	from 0,00	Additional information Find at suppliers Buy in store
	IXT-1-1N100S1	IXYS	MOSFET N-CH 1000V 1.5A 8-SOIC Drain to Source Voltage (Vdss): 1000V (1kV) · Current - Continuous Drain (Id) @ 25° C: 1.5A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: 8-SOIC	from 0,00	Additional information Find at suppliers Buy in store
	IXTP1N100	IXYS	MOSFET N-CH 1000V 1.5A TO-220AB Rds On (Max) @ Id, Vgs: 11 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 14.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 54W · Mounting Type: Through Hole · Package / Case: TO-220AB	from 0,00	Additional information Find at suppliers Buy in store
	IXTH1N100	IXYS	MOSFET N-CH 1000V 1.5A TO-247 Rds On (Max) @ Id, Vgs: 11 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 480pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-247AD	from 0,00	Additional information Find at suppliers Buy in store
	IXTA1N100	IXYS	MOSFET N-CH 1000V 1.5A TO-263 Rds On (Max) @ Id, Vgs: 11 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 14.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 54W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	from 0,00	Additional information Find at suppliers Buy in store
	IXTT1N100	IXYS	MOSFET N-CH 1000V 1.5A TO-268 Rds On (Max) @ Id, Vgs: 11 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 480pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Surface Mount · Package / Case: TO-268	from 0,00	Additional information Find at suppliers Buy in store
	IXTA1R6N100D2	IXYS	MOSFET N-CH 1000V 1.6A D2PAK Rds On (Max) @ Id, Vgs: 10 Ohm @ 800mA, 0V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 27nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.6A · Input Capacitance (Ciss) @ Vds: 645pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 100W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	IXTY1R6N100D2	IXYS	MOSFET N-CH 1000V 1.6A DPAK Rds On (Max) @ Id, Vgs: 10 Ohm @ 800mA, 0V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 27nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.6A · Input Capacitance (Ciss) @ Vds: 645pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 100W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	FQD2N100TM	Fairchild Semiconductor	MOSFET N-CH 1000V 1.6A DPAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 9 Ohm @ 800mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 15.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.6A · Input Capacitance (Ciss) @ Vds: 520pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	FQD2N100TF	Fairchild Semiconductor	MOSFET N-CH 1000V 1.6A DPAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 9 Ohm @ 800mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 15.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.6A · Input Capacitance (Ciss) @ Vds: 520pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Additional information Find at suppliers Buy in store
	FQU2N100TU	Fairchild Semiconductor	MOSFET N-CH 1000V 1.6A IPAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 9 Ohm @ 800mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 15.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.6A · Input Capacitance (Ciss) @ Vds: 520pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	from 0,00	Additional information Find at suppliers Buy in store
	IXTP1R6N100D2	IXYS	MOSFET N-CH 1000V 1.6A TP220AB Rds On (Max) @ Id, Vgs: 10 Ohm @ 800mA, 0V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 27nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.6A · Input Capacitance (Ciss) @ Vds: 645pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220AB	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	STD2NK100Z	STMicroelectronics	MOSFET N-CH 1000V 1.85A DPAK Серия: SuperMESH™ · Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 900mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.85A · Input Capacitance (Ciss) @ Vds: 499pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 70W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	STU2NK100Z	STMicroelectronics	MOSFET N-CH 1000V 1.85A IPAK Серия: SuperMESH™ · Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 900mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.85A · Input Capacitance (Ciss) @ Vds: 499pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 70W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	from 0,00	Additional information Find at suppliers Buy in store
	STP2NK100Z	STMicroelectronics	MOSFET N-CH 1000V 1.85A TO-220 Серия: SuperMESH™ · Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 900mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.85A · Input Capacitance (Ciss) @ Vds: 499pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 70W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	IXTY01N100	IXYS	MOSFET N-CH 1000V 100MA DPAK Rds On (Max) @ Id, Vgs: 80 mOhm @ 100mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 6.9nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100mA · Input Capacitance (Ciss) @ Vds: 54pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	from 0,00	Additional information Find at suppliers Buy in store
	IXFR12N100Q	IXYS	MOSFET N-CH 1000V 10A ISOPLUS247 Серия: HiPerFET™ · Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 6A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 90nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 2900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: ISOPLUS247™	from 0,00	Additional information Find at suppliers Buy in store
	IXFR12N100	IXYS	MOSFET N-CH 1000V 10A ISOPLUS247 Серия: HiPerFET™ · Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 6A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 90nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 2900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: ISOPLUS247™		Additional information Find at suppliers Buy in store
	IXFM10N100	IXYS	MOSFET N-CH 1000V 10A TO-204AA Серия: HiPerFET™ · Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 155nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 4000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-204, TO-3	from 0,00	Additional information Find at suppliers Buy in store
	IXTH10N100D	IXYS	MOSFET N-CH 1000V 10A TO-247 Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 10A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 130nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 2500pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 400W · Mounting Type: Through Hole · Package / Case: TO-247	from 0,00	Additional information Find at suppliers Buy in store
	IXFH10N100Q	IXYS	MOSFET N-CH 1000V 10A TO-247AD Серия: HiPerFET™ · Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 155nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 4000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-247AD	from 0,00	Additional information Find at suppliers Buy in store

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