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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

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PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
2N7002E-T1-E32N7002E-T1-E3Vishay/SiliconixMOSFET N-CH 60V 240MA SOT-23
Rds On (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 240mA  ·  Input Capacitance (Ciss) @ Vds: 21pF @ 5V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002ET1G2N7002ET1GON SemiconductorMOSFET N-CH 60V 260MA SOT-23
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.81nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 260mA  ·  Input Capacitance (Ciss) @ Vds: 26.7pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002ET3GON SemiconductorMOSFET N-CH 60V 260MA SOT-23
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.81nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 260mA  ·  Input Capacitance (Ciss) @ Vds: 26.7pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002F,2152N7002F,215NXP SemiconductorsMOSFET N-CH 60V 475MA SOT23
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.69nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 475mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002K2N7002KFairchild SemiconductorMOSFET N-CH 60V 115MA SOT23
Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002K,2152N7002K,215NXP SemiconductorsMOSFET N-CH 60V 340MA SOT23
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 340mA  ·  Input Capacitance (Ciss) @ Vds: 40pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002K-72N7002K-7Diodes IncMOSFET N-CH 60V 300MA SOT23-3
Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 300mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002K-T1-E32N7002K-T1-E3Vishay/SiliconixMOSFET N-CH 60V 300MA SOT-23
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 300mA  ·  Input Capacitance (Ciss) @ Vds: 30pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002KT1G2N7002KT1GON SemiconductorMOSFET N-CH 60V 320MA SOT-23
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.7nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 320mA  ·  Input Capacitance (Ciss) @ Vds: 24.5pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002KT3GON SemiconductorMOSFET N-CH 60V 320MA SOT-23
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.7nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 320mA  ·  Input Capacitance (Ciss) @ Vds: 24.5pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002LT12N7002LT1ON SemiconductorMOSFET N-CH 60V 115MA SOT-23
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 225mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002LT1G2N7002LT1GON SemiconductorMOSFET N-CH 60V 115MA SOT-23
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 225mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002LT32N7002LT3ON SemiconductorMOSFET N-CH 60V 115MA SOT-23
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 225mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002LT3G2N7002LT3GON SemiconductorMOSFET N-CH 60V 115MA SOT-23
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 225mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002MTF2N7002MTFFairchild SemiconductorMOSFET N-CH 60V 115MA SOT-23
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 200mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002T2N7002TFairchild SemiconductorMOSFET N-CH 60V 115MA SOT-523F
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 200mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-523F
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2N7002T,215NXP SemiconductorsMOSFET N-CH 60V 300MA SOT-23
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 300mA  ·  Input Capacitance (Ciss) @ Vds: 40pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002T-72N7002T-7Diodes IncMOSFET N-CH 60V 115MA SOT-523
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-523
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2N7002T-7-F2N7002T-7-FDiodes IncMOSFET N-CH 60V 115MA SOT-523
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-523
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2N7002TA2N7002TADiodes/ZetexMOSFET N-CH 60V 115MA SOT23-3
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 330mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002TC2N7002TCDiodes/ZetexMOSFET N-CHAN 60V SOT23-3
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 330mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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2N7002-TP2N7002-TPMicro Commercial CoMOSFET N-CH 115MA 60V SOT-23
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 200mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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2N7002W2N7002WFairchild SemiconductorMOSFET N-CH 60V 115MA SOT-323
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 200mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
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2N7002W-72N7002W-7Diodes IncMOSFET N-CH 60V 115MA SOT-323
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 200mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
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2N7002W-7-F2N7002W-7-FDiodes IncMOSFET N-CH 60V 115MA SOT323
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 200mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
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