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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

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Серия















































 
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
APT10086BVRGMicrosemi-PPGMOSFET N-CH 1000V 13A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 860 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 275nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 4440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT10086BVFRGMicrosemi-PPGMOSFET N-CH 1000V 13A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 860 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 275nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 4440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APTM100UM65SAGAPTM100UM65SAGMicrosemi-PPGMOSFET N-CH 1000V 145A SP6
Rds On (Max) @ Id, Vgs: 78 mOhm @ 72.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 1068nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 145A  ·  Input Capacitance (Ciss) @ Vds: 28500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3250W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP6
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APTM100UM65DAGMicrosemi-PPGMOSFET N-CH 1000V 145A SP6
Rds On (Max) @ Id, Vgs: 78 mOhm @ 72.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 1068nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 145A  ·  Input Capacitance (Ciss) @ Vds: 28500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3250W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP6
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APT10078SFLLGMicrosemi-PPGMOSFET N-CH 1000V 14A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 780 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 2525pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT10078SLLGMicrosemi-PPGMOSFET N-CH 1000V 14A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 780 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 2525pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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IXFX14N100IXYSMOSFET N-CH 1000V 14A PLUS247
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 750 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 220nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 360W  ·  Mounting Type: Through Hole  ·  Package / Case: PLUS 247
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APT10078BFLLGMicrosemi-PPGMOSFET N-CH 1000V 14A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 780 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 2525pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT10078BLLGMicrosemi-PPGMOSFET N-CH 1000V 14A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 780 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 2525pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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IXFH14N100IXYSMOSFET N-CH 1000V 14A TO-247
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 750 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 220nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 360W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247AD
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IXFH14N100Q2IXYSMOSFET N-CH 1000V 14A TO-247
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 900 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 83nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 2700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247AD
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APT14M100BAPT14M100BMicrosemi-PPGMOSFET N-CH 1000V 14A TO-247
Серия: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 900 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 120nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 3965pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT14F100BMicrosemi-PPGMOSFET N-CH 1000V 14A TO-247
Серия: POWER MOS 8™  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 120nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 3965pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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IXTH14N100IXYSMOSFET N-CH 1000V 14A TO-247
Серия: MegaMOS™  ·  Rds On (Max) @ Id, Vgs: 820 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 5650pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 360W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247AD
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IXFT14N100IXYSMOSFET N-CH 1000V 14A TO-268
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 750 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 220nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 360W  ·  Mounting Type: Surface Mount  ·  Package / Case: TO-268
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IXFR26N100PIXYSMOSFET N-CH 1000V 15A ISOPLUS247
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 430 mOhm @ 13A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 197nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 11900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 290W  ·  Mounting Type: Through Hole  ·  Package / Case: ISOPLUS247™
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IXFV15N100PIXYSMOSFET N-CH 1000V 15A PLUS220
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 760 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 97nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 5140pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 543W  ·  Mounting Type: Through Hole  ·  Package / Case: PLUS-220
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IXFV15N100PSIXYSMOSFET N-CH 1000V 15A PLUS220SMD
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 760 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 97nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 5140pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 543W  ·  Mounting Type: Surface Mount  ·  Package / Case: PLUS-220SMD
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IXFH15N100QIXYSMOSFET N-CH 1000V 15A TO-247
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 700 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 170nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 360W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247AD
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IXFH15N100IXYSMOSFET N-CH 1000V 15A TO-247
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 700 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 220nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 360W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247AD
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IXFH15N100PIXYSMOSFET N-CH 1000V 15A TO-247
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 760 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 97nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 5140pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 543W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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IXFK15N100QIXYSMOSFET N-CH 1000V 15A TO-264
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 700 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 170nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 360W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264AA
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IXFT15N100QIXYSMOSFET N-CH 1000V 15A TO-268
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 700 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 170nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 360W  ·  Mounting Type: Surface Mount  ·  Package / Case: TO-268
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APT17F100BAPT17F100BMicrosemi-PPGMOSFET N-CH 1000V 17A TO-247
Rds On (Max) @ Id, Vgs: 800 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 150nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 4845pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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IXFR32N100PIXYSMOSFET N-CH 1000V 18A ISOPLUS247
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 340 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 14200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 320W  ·  Mounting Type: Through Hole  ·  Package / Case: ISOPLUS247™
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