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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

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Серия















































 
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
APT10050LVRGMicrosemi-PPGMOSFET N-CH 1000V 21A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 500nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 7900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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IXTK21N100IXYSMOSFET N-CH 1000V 21A TO-264
Серия: MegaMOS™  ·  Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 250nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 8400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264AA
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IXFK21N100QIXYSMOSFET N-CH 1000V 21A TO-264
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 170nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 6900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264AA
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APT10050LVFRGMicrosemi-PPGMOSFET N-CH 1000V 21A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 500nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 7900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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IXFF24N100IXYSMOSFET N-CH 1000V 22A I4-PAC
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 390 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 250nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Through Hole  ·  Package / Case: ISOPLUS i4-PAC™
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IXFL44N100PIXYSMOSFET N-CH 1000V 22A I5-PAK
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 22A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 19000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 357W  ·  Mounting Type: Through Hole  ·  Package / Case: ISOPLUSi5-Pak™
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IXFE24N100IXYSMOSFET N-CH 1000V 22A ISOPLUS227
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 250nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 7000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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IXTX22N100LIXTX22N100LIXYSMOSFET N-CH 1000V 22A PLUS247
Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 20V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 270nC @ 15V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 7050pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Through Hole  ·  Package / Case: PLUS 247
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APT22F100JMicrosemi-PPGMOSFET N-CH 1000V 22A SOT-227
Серия: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 9835pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 545W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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IXTN22N100LIXYSMOSFET N-CH 1000V 22A SOT-227
Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 20V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 270nC @ 15V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 7050pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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APT10043JVRMicrosemi-PPGMOSFET N-CH 1000V 22A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 430 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 480nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 9000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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IXTK22N100LIXYSMOSFET N-CH 1000V 22A TO-264
Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 20V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 270nC @ 15V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 7050pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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IXFN26N100PIXYSMOSFET N-CH 1000V 23A SOT-227B
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 390 mOhm @ 13A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 197nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 11900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 595W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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IXFN23N100IXYSMOSFET N-CH 1000V 23A SOT-227B
Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 595W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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APTM100DA33T1GMicrosemi-PPGMOSFET N-CH 1000V 23A SP1
Rds On (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 7868pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 390W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP1 Module
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APTM100SK33T1GMicrosemi-PPGMOSFET N-CH 1000V 23A SP1
Rds On (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 7868pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 390W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP1 Module
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APT10045B2FLLGMicrosemi-PPGMOSFET N-CH 1000V 23A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 11.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 154nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 4350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 565W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT10045B2LLGMicrosemi-PPGMOSFET N-CH 1000V 23A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 11.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 154nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 4350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 565W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT10045LFLLGMicrosemi-PPGMOSFET N-CH 1000V 23A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 11.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 154nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 4350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 565W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT10045LLLGMicrosemi-PPGMOSFET N-CH 1000V 23A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 11.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 154nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 4350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 565W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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IXFX24N100IXFX24N100IXYSMOSFET N-CH 1000V 24A PLUS 247
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 390 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 267nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 8700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 560W  ·  Mounting Type: Through Hole  ·  Package / Case: PLUS 247
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IXTX24N100IXTX24N100IXYSMOSFET N-CH 1000V 24A PLUS247
Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 267nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 8700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 568W  ·  Mounting Type: Through Hole  ·  Package / Case: PLUS 247
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APT10035JFLLMicrosemi-PPGMOSFET N-CH 1000V 25A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 186nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 5185pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT25M100JMicrosemi-PPGMOSFET N-CH 1000V 25A SOT-227
Серия: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 330 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 9835pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 545W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10035JLLMicrosemi-PPGMOSFET N-CH 1000V 25A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 186nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 5185pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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