Дискретные полупроводники · MOSFET транзисторы (одиночные)

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Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	APT10040B2VRG	Microsemi-PPG	MOSFET N-CH 1000V 25A T-MAX Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 630nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 9400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 625W · Mounting Type: Through Hole · Package / Case: T-MAX	from 0,00	Additional information Find at suppliers Buy in store
	APT10040B2VFRG	Microsemi-PPG	MOSFET N-CH 1000V 25A T-MAX Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 630nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 9400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 625W · Mounting Type: Through Hole · Package / Case: T-MAX	from 0,00	Additional information Find at suppliers Buy in store
	APT10040LVRG	Microsemi-PPG	MOSFET N-CH 1000V 25A TO-264 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 630nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 9400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 625W · Mounting Type: Through Hole · Package / Case: TO-264	from 0,00	Additional information Find at suppliers Buy in store
	APT10040LVFRG	Microsemi-PPG	MOSFET N-CH 1000V 25A TO-264 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 630nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 9400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 625W · Mounting Type: Through Hole · Package / Case: TO-264	from 0,00	Additional information Find at suppliers Buy in store
	IXFX26N100P	IXYS	MOSFET N-CH 1000V 26A PLUS247 Серия: Polar™ · Rds On (Max) @ Id, Vgs: 390 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 197nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 26A · Input Capacitance (Ciss) @ Vds: 11900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 780W · Mounting Type: Through Hole · Package / Case: PLUS 247	from 0,00	Additional information Find at suppliers Buy in store
	IXFK26N100P	IXYS	MOSFET N-CH 1000V 26A TO-264 Серия: Polar™ · Rds On (Max) @ Id, Vgs: 390 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 197nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 26A · Input Capacitance (Ciss) @ Vds: 11900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 780W · Mounting Type: Through Hole · Package / Case: TO-264	from 0,00	Additional information Find at suppliers Buy in store
	IXFN32N100P	IXYS	MOSFET N-CH 1000V 27A SOT-227B Серия: Polar™ · Rds On (Max) @ Id, Vgs: 320 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 225nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 27A · Input Capacitance (Ciss) @ Vds: 14200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 690W · Mounting Type: Chassis Mount · Package / Case: SOT-227B miniBLOC	from 0,00	Additional information Find at suppliers Buy in store
	APT10035B2LLG	Microsemi-PPG	MOSFET N-CH 1000V 28A T-MAX Серия: POWER MOS 7® · Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 186nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 5185pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 690W · Mounting Type: Through Hole · Package / Case: T-MAX	from 0,00	Additional information Find at suppliers Buy in store
	APT10035B2FLLG	Microsemi-PPG	MOSFET N-CH 1000V 28A T-MAX Серия: POWER MOS 7® · Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 186nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 5185pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 690W · Mounting Type: Through Hole · Package / Case: T-MAX	from 0,00	Additional information Find at suppliers Buy in store
	APT10035LFLLG	Microsemi-PPG	MOSFET N-CH 1000V 28A TO-264 Серия: POWER MOS 7® · Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 186nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 5185pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 690W · Mounting Type: Through Hole · Package / Case: TO-264	from 0,00	Additional information Find at suppliers Buy in store
	APT10035LLLG	Microsemi-PPG	MOSFET N-CH 1000V 28A TO-264 Серия: POWER MOS 7® · Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 186nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 5185pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 690W · Mounting Type: Through Hole · Package / Case: TO-264	from 0,00	Additional information Find at suppliers Buy in store
	IXFL38N100P	IXYS	MOSFET N-CH 1000V 29A I5-PAK Серия: Polar™ · Rds On (Max) @ Id, Vgs: 230 mOhm @ 19A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 350nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 29A · Input Capacitance (Ciss) @ Vds: 24000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 520W · Mounting Type: Through Hole · Package / Case: ISOPLUSi5-Pak™	from 0,00	Additional information Find at suppliers Buy in store
	IXFL38N100Q2	IXYS	MOSFET N-CH 1000V 29A ISOPLUS264 Серия: HiPerFET™ · Rds On (Max) @ Id, Vgs: 280 mOhm @ 19A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 250nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 29A · Input Capacitance (Ciss) @ Vds: 13500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 380W · Mounting Type: Through Hole · Package / Case: ISOPLUS264™	from 0,00	Additional information Find at suppliers Buy in store
	APT29F100B2	Microsemi-PPG	MOSFET N-CH 1000V 29A T-MAX Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 460 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 29A · Input Capacitance (Ciss) @ Vds: 8500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1040W · Mounting Type: Through Hole · Package / Case: T-MAX	from 0,00	Additional information Find at suppliers Buy in store
	APT29F100L	Microsemi-PPG	MOSFET N-CH 1000V 29A TO-264 Rds On (Max) @ Id, Vgs: 460 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 29A · Input Capacitance (Ciss) @ Vds: 8500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1040W · Mounting Type: Through Hole · Package / Case: TO-264	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	IXTP2N100P	IXYS	MOSFET N-CH 1000V 2A TO-220 Серия: Polar™ · Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 24.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 655pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 86W · Mounting Type: Through Hole · Package / Case: TO-220	from 0,00	Additional information Find at suppliers Buy in store
	IXTP2N100	IXYS	MOSFET N-CH 1000V 2A TO-220AB Rds On (Max) @ Id, Vgs: 7 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 825pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-220AB	from 0,00	Additional information Find at suppliers Buy in store
	IXTY2N100P	IXYS	MOSFET N-CH 1000V 2A TO-252 Серия: Polar™ · Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 24.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 655pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 86W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	from 0,00	Additional information Find at suppliers Buy in store
	IXTA2N100P	IXYS	MOSFET N-CH 1000V 2A TO-263 Серия: Polar™ · Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 24.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 655pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 86W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	from 0,00	Additional information Find at suppliers Buy in store
	IXTA2N100	IXYS	MOSFET N-CH 1000V 2A TO-263 Rds On (Max) @ Id, Vgs: 7 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 825pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	from 0,00	Additional information Find at suppliers Buy in store
	IRFBG30STRL	Vishay/Siliconix	MOSFET N-CH 1000V 3.1A D2PAK Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.1A · Input Capacitance (Ciss) @ Vds: 980pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Additional information Find at suppliers Buy in store
	IRFBG30STRR	Vishay/Siliconix	MOSFET N-CH 1000V 3.1A D2PAK Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.1A · Input Capacitance (Ciss) @ Vds: 980pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Additional information Find at suppliers Buy in store
	IRFBG30S	Vishay/Siliconix	MOSFET N-CH 1000V 3.1A D2PAK Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.1A · Input Capacitance (Ciss) @ Vds: 980pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Additional information Find at suppliers Buy in store
	IRFBG30	Vishay/Siliconix	MOSFET N-CH 1000V 3.1A TO-220AB Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.1A · Input Capacitance (Ciss) @ Vds: 980pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	from 0,00	Additional information Find at suppliers Buy in store
	IRFBG30PBF	Vishay/Siliconix	MOSFET N-CH 1000V 3.1A TO-220AB Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.1A · Input Capacitance (Ciss) @ Vds: 980pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	from 0,00 to 0,00	Additional information Find at suppliers Buy in store

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