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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

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PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
APL1001JAPL1001JMicrosemi-PPGMOSFET N-CH 1000V 18A SOT-227
Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 7200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT18M100BAPT18M100BMicrosemi-PPGMOSFET N-CH 1000V 18A TO-247
Rds On (Max) @ Id, Vgs: 700 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 150nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 4845pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT10050JVFRMicrosemi-PPGMOSFET N-CH 1000V 19A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 500nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 7900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT19F100JMicrosemi-PPGMOSFET N-CH 1000V 19A SOT-227
Серия: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 460 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 260nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 8500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 460W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10050JVRMicrosemi-PPGMOSFET N-CH 1000V 19A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 500nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 7900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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IXTP1N100PIXYSMOSFET N-CH 1000V 1A TO-220
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 15 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 15.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1A  ·  Input Capacitance (Ciss) @ Vds: 331pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IXTY1N100PIXYSMOSFET N-CH 1000V 1A TO-252
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 15 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 15.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1A  ·  Input Capacitance (Ciss) @ Vds: 331pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IXTA1N100PIXYSMOSFET N-CH 1000V 1A TO-263
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 15 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 15.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1A  ·  Input Capacitance (Ciss) @ Vds: 331pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STD3NK100ZSTD3NK100ZSTMicroelectronicsMOSFET N-CH 1000V 2.5A DPAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 1.25A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.5A  ·  Input Capacitance (Ciss) @ Vds: 601pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STP3NK100ZSTP3NK100ZSTMicroelectronicsMOSFET N-CH 1000V 2.5A TO-220
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 1.25A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.5A  ·  Input Capacitance (Ciss) @ Vds: 601pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STF3NK100ZSTF3NK100ZSTMicroelectronicsMOSFET N-CH 1000V 2.5A TO-220FP
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 1.25A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.5A  ·  Input Capacitance (Ciss) @ Vds: 601pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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APTM100DA40T1GMicrosemi-PPGMOSFET N-CH 1000V 20A SP1
Rds On (Max) @ Id, Vgs: 480 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 260nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 6800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 357W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP1 Module
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APTM100SK40T1GMicrosemi-PPGMOSFET N-CH 1000V 20A SP1
Rds On (Max) @ Id, Vgs: 480 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 260nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 6800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 357W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP1 Module
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IXFH20N100PIXYSMOSFET N-CH 1000V 20A TO-247
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 570 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 126nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 7300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 660W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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IXFT20N100PIXYSMOSFET N-CH 1000V 20A TO-268
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 570 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 126nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 7300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 660W  ·  Mounting Type: Surface Mount  ·  Package / Case: TO-268
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APTM100UM45DAGMicrosemi-PPGMOSFET N-CH 1000V 215A SP6
Rds On (Max) @ Id, Vgs: 52 mOhm @ 107.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 1602nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 215A  ·  Input Capacitance (Ciss) @ Vds: 42700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 5000W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP6
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APTM100UM45FAGAPTM100UM45FAGMicrosemi-PPGMOSFET N-CH 1000V 215A SP6
Rds On (Max) @ Id, Vgs: 52 mOhm @ 107.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 1602nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 215A  ·  Input Capacitance (Ciss) @ Vds: 42700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 5000W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP6
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IXFE23N100IXYSMOSFET N-CH 1000V 21A ISOPLUS227
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 430 mOhm @ 11.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 250nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 7000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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IXFX21N100QIXFX21N100QIXYSMOSFET N-CH 1000V 21A PLUS 247
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 170nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 6900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Through Hole  ·  Package / Case: PLUS 247
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APT21M100JMicrosemi-PPGMOSFET N-CH 1000V 21A SOT-227
Серия: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 260nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 8500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 462W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10045JLLMicrosemi-PPGMOSFET N-CH 1000V 21A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 11.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 154nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 4350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 460W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10045JFLLMicrosemi-PPGMOSFET N-CH 1000V 21A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 11.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 154nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 4350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 460W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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IXFN21N100QIXYSMOSFET N-CH 1000V 21A SOT-227B
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 170nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 5900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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APT10050B2VFRGMicrosemi-PPGMOSFET N-CH 1000V 21A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 500nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 7900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT10050B2VRGMicrosemi-PPGMOSFET N-CH 1000V 21A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 500nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 7900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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