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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

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PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
IRFPG30IRFPG30Vishay/SiliconixMOSFET N-CH 1000V 3.1A TO-247AC
Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.1A  ·  Input Capacitance (Ciss) @ Vds: 980pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFPG30PBFIRFPG30PBFVishay/SiliconixMOSFET N-CH 1000V 3.1A TO-247AC
Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.1A  ·  Input Capacitance (Ciss) @ Vds: 980pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFBG30LVishay/SiliconixMOSFET N-CH 1000V 3.1A TO-262
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.1A  ·  Input Capacitance (Ciss) @ Vds: 980pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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STW5NK100ZSTW5NK100ZSTMicroelectronicsMOSFET N-CH 1000V 3.5A TO-247
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 1.75A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 59nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.5A  ·  Input Capacitance (Ciss) @ Vds: 1154pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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IXFE34N100IXYSMOSFET N-CH 1000V 30A ISOPLUS227
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 280 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 455nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 15000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 580W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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IXFL34N100IXYSMOSFET N-CH 1000V 30A ISOPLUS264
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 280 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 380nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 9200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 550W  ·  Mounting Type: Through Hole  ·  Package / Case: ISOPLUS264™
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IXFX30N100Q2IXFX30N100Q2IXYSMOSFET N-CH 1000V 30A PLUS247
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 186nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 8200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 735W  ·  Mounting Type: Through Hole  ·  Package / Case: PLUS 247
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IXTB30N100LIXYSMOSFET N-CH 1000V 30A PLUS264
Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 20V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 545nC @ 20V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 13200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 800W  ·  Mounting Type: Through Hole  ·  Package / Case: 3-PLUS264™
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APT10026JLLMicrosemi-PPGMOSFET N-CH 1000V 30A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 267nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 7114pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 595W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10026JFLLMicrosemi-PPGMOSFET N-CH 1000V 30A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 267nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 7114pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 595W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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IXTN30N100LIXYSMOSFET N-CH 1000V 30A SOT-227
Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 20V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 545nC @ 20V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 13700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 800W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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IXFK30N100Q2IXYSMOSFET N-CH 1000V 30A TO-264
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 186nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 8200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 735W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264AA
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APT31M100B2Microsemi-PPGMOSFET N-CH 1000V 31A T-MAX
Серия: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 260nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 31A  ·  Input Capacitance (Ciss) @ Vds: 8500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1040W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT31M100LAPT31M100LMicrosemi-PPGMOSFET N-CH 1000V 31A TO-264
Серия: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 260nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 31A  ·  Input Capacitance (Ciss) @ Vds: 8500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1040W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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IXFX32N100PIXYSMOSFET N-CH 1000V 32A PLUS247
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 320 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 32A  ·  Input Capacitance (Ciss) @ Vds: 14200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 960W  ·  Mounting Type: Through Hole  ·  Package / Case: PLUS 247
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IXFK32N100PIXYSMOSFET N-CH 1000V 32A TO-264
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 320 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 32A  ·  Input Capacitance (Ciss) @ Vds: 14200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 960W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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IXFE36N100IXYSMOSFET N-CH 1000V 33A ISOPLUS227
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 455nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 15000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 580W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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APT10030L2VRGMicrosemi-PPGMOSFET N-CH 1000V 33A TO-264MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 16.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 585nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 10600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 833W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT10030L2VFRGMicrosemi-PPGMOSFET N-CH 1000V 33A TO-264MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 16.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 585nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 10600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 833W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT10025JVRMicrosemi-PPGMOSFET N-CH 1000V 34A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 990nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 18000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10025JVFRMicrosemi-PPGMOSFET N-CH 1000V 34A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 990nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 18000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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IXFN34N100IXYSMOSFET N-CH 1000V 34A SOT-227B
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 280 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 380nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 9200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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APT34F100B2Microsemi-PPGMOSFET N-CH 1000V 34A T-MAX
Серия: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 9835pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1135W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT34F100LAPT34F100LMicrosemi-PPGMOSFET N-CH 1000V 34A TO-264
Rds On (Max) @ Id, Vgs: 400 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 9835pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1135W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT10021JFLLMicrosemi-PPGMOSFET N-CH 1000V 37A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 210 mOhm @ 18.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 395nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 37A  ·  Input Capacitance (Ciss) @ Vds: 9750pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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