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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
FQPF3N60 | Fairchild Semiconductor | MOSFET N-CH 600V 2A TO-220F Серия: QFET™ · Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 450pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 34W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | Additional information Find at suppliers Buy in store | ||
HAT2166H | Renesas Technology America | MOSFET N-CH 30V 45A LFPAK Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 22.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 27nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 4400pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: LFPAK | Additional information Find at suppliers Buy in store | ||
IRLR8503TRLPBF | International Rectifier | MOSFET N-CH 30V 44A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 20nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 44A · Input Capacitance (Ciss) @ Vds: 1650pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 62W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Additional information Find at suppliers Buy in store | ||
SPI47N10 | Infineon Technologies | MOSFET N-CH 100V 47A I2PAK Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 105nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 2500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 175W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | Additional information Find at suppliers Buy in store | ||
IRF540NL | International Rectifier | MOSFET N-CH 100V 33A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 44 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 71nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 33A · Input Capacitance (Ciss) @ Vds: 1960pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 130W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads) | Additional information Find at suppliers Buy in store | ||
STW14NK60Z | STMicroelectronics | MOSFET N-CH 600V 13.5A TO-247 Серия: SuperMESH™ · Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 75nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13.5A · Input Capacitance (Ciss) @ Vds: 2220pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 160W · Mounting Type: Through Hole · Package / Case: TO-247-3 | Additional information Find at suppliers Buy in store | ||
NTD4854N-1G | ON Semiconductor | MOSFET N-CH 25V 15.7A IPAK Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 49.2nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 15.7A · Input Capacitance (Ciss) @ Vds: 4600pf @ 12V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.43W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | Additional information Find at suppliers Buy in store | ||
FQI34P10TU | Fairchild Semiconductor | MOSFET P-CH 100V 33.5A I2PAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 60 mOhm @ 16.75A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 33.5A · Input Capacitance (Ciss) @ Vds: 2910pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.75W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | Additional information Find at suppliers Buy in store | ||
NTHS5443T1 | ON Semiconductor | MOSFET P-CH 20V 3.6A CHIPFET Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.6A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 12nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3.6A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: 8-ChipFET™ | Additional information Find at suppliers Buy in store | ||
IRFZ46Z | International Rectifier | MOSFET N-CH 55V 51A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 31A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 46nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 51A · Input Capacitance (Ciss) @ Vds: 1460pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 82W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Additional information Find at suppliers Buy in store | ||
PHD82NQ03LT,118 | NXP Semiconductors | MOSFET N-CH 30V 75A DPAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 16.7nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 1620pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 136W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Additional information Find at suppliers Buy in store | ||
IRL520NSTRL | International Rectifier | MOSFET N-CH 100V 10A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 20nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 440pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Additional information Find at suppliers Buy in store | ||
FQPF14N30 | Fairchild Semiconductor | MOSFET N-CH 300V 8.5A TO-220F Серия: QFET™ · Rds On (Max) @ Id, Vgs: 290 mOhm @ 4.25A, 10V · Drain to Source Voltage (Vdss): 300V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.5A · Input Capacitance (Ciss) @ Vds: 1360pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | Additional information Find at suppliers Buy in store | ||
STV160NF02LAT4 | STMicroelectronics | MOSFET N-CH 20V 160A POWERSO-10 Серия: STripFET™ · Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 175nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 160A · Input Capacitance (Ciss) @ Vds: 5500pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 210W · Mounting Type: Surface Mount · Package / Case: PowerSO-10 Exposed Bottom Pad | Additional information Find at suppliers Buy in store | ||
IRFR2407TRR | International Rectifier | MOSFET N-CH 75V 42A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Additional information Find at suppliers Buy in store | ||
NTMS4706NR2G | ON Semiconductor | MOSFET N-CH 30V 6.4A 8-SOIC Rds On (Max) @ Id, Vgs: 12 mOhm @ 10.3A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 15nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 6.4A · Input Capacitance (Ciss) @ Vds: 950pF @ 24V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 830mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Additional information Find at suppliers Buy in store | ||
FQU7N10LTU | Fairchild Semiconductor | MOSFET N-CH 100V 5.8A IPAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.9A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 6nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 5.8A · Input Capacitance (Ciss) @ Vds: 290pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | Additional information Find at suppliers Buy in store | ||
SPD100N03S2L04T | Infineon Technologies | MOSFET N-CH 30V 100A DPAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 89.7nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 3320pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (4 leads + tab) | Additional information Find at suppliers Buy in store |
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