Log in    Register
ChipFind Component Selection Catalog
For example: transistor, max232, lt319a
 

Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

Производитель
























Серия















































 
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
FQPF3N60FQPF3N60Fairchild SemiconductorMOSFET N-CH 600V 2A TO-220F
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 450pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 34W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
Additional information
Find at suppliers
Buy in store
HAT2166HRenesas Technology AmericaMOSFET N-CH 30V 45A LFPAK
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 22.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 4400pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
Additional information
Find at suppliers
Buy in store
IRLR8503TRLPBFIRLR8503TRLPBFInternational RectifierMOSFET N-CH 30V 44A DPAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 44A  ·  Input Capacitance (Ciss) @ Vds: 1650pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 62W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
Additional information
Find at suppliers
Buy in store
SPI47N10Infineon TechnologiesMOSFET N-CH 100V 47A I2PAK
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 105nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 47A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 175W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
Additional information
Find at suppliers
Buy in store
IRF540NLIRF540NLInternational RectifierMOSFET N-CH 100V 33A TO-262
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 44 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 71nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 1960pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 130W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-262-3 (Straight Leads)
Additional information
Find at suppliers
Buy in store
STW14NK60ZSTW14NK60ZSTMicroelectronicsMOSFET N-CH 600V 13.5A TO-247
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 75nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13.5A  ·  Input Capacitance (Ciss) @ Vds: 2220pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
Additional information
Find at suppliers
Buy in store
NTD4854N-1GON SemiconductorMOSFET N-CH 25V 15.7A IPAK
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 49.2nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 15.7A  ·  Input Capacitance (Ciss) @ Vds: 4600pf @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.43W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
Additional information
Find at suppliers
Buy in store
FQI34P10TUFairchild SemiconductorMOSFET P-CH 100V 33.5A I2PAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 60 mOhm @ 16.75A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33.5A  ·  Input Capacitance (Ciss) @ Vds: 2910pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
Additional information
Find at suppliers
Buy in store
NTHS5443T1ON SemiconductorMOSFET P-CH 20V 3.6A CHIPFET
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.6A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.6A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-ChipFET™
Additional information
Find at suppliers
Buy in store
IRFZ46ZIRFZ46ZInternational RectifierMOSFET N-CH 55V 51A TO-220AB
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 31A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 46nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 51A  ·  Input Capacitance (Ciss) @ Vds: 1460pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 82W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
Additional information
Find at suppliers
Buy in store
PHD82NQ03LT,118PHD82NQ03LT,118NXP SemiconductorsMOSFET N-CH 30V 75A DPAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 16.7nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 1620pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 136W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
Additional information
Find at suppliers
Buy in store
IRL520NSTRLIRL520NSTRLInternational RectifierMOSFET N-CH 100V 10A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
Additional information
Find at suppliers
Buy in store
FQPF14N30FQPF14N30Fairchild SemiconductorMOSFET N-CH 300V 8.5A TO-220F
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 290 mOhm @ 4.25A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.5A  ·  Input Capacitance (Ciss) @ Vds: 1360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
Additional information
Find at suppliers
Buy in store
STV160NF02LAT4STMicroelectronicsMOSFET N-CH 20V 160A POWERSO-10
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 175nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 160A  ·  Input Capacitance (Ciss) @ Vds: 5500pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 210W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerSO-10 Exposed Bottom Pad
Additional information
Find at suppliers
Buy in store
IRFR2407TRRIRFR2407TRRInternational RectifierMOSFET N-CH 75V 42A DPAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 42A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 110W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
Additional information
Find at suppliers
Buy in store
NTMS4706NR2GNTMS4706NR2GON SemiconductorMOSFET N-CH 30V 6.4A 8-SOIC
Rds On (Max) @ Id, Vgs: 12 mOhm @ 10.3A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 6.4A  ·  Input Capacitance (Ciss) @ Vds: 950pF @ 24V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
Additional information
Find at suppliers
Buy in store
FQU7N10LTUFairchild SemiconductorMOSFET N-CH 100V 5.8A IPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.9A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.8A  ·  Input Capacitance (Ciss) @ Vds: 290pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
Additional information
Find at suppliers
Buy in store
SPD100N03S2L04TInfineon TechnologiesMOSFET N-CH 30V 100A DPAK
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 89.7nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 3320pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (4 leads + tab)
Additional information
Find at suppliers
Buy in store
← Ctrl  1 ... 575576577578579580581582next  Ctrl →

© 2006 — 2024 ChipFind Ltd.
Contact phone, e-mail, ICQ
Catalog with parameters for 1,401,534 components RegisterAdvertising