Дискретные полупроводники · MOSFET транзисторы (одиночные)

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Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	SPP80N03S2L-05	Infineon Technologies	MOSFET N-CH 30V 80A TO-220AB Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 55A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 89.7nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3320pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 167W · Mounting Type: Through Hole · Package / Case: TO-220AB		Additional information Find at suppliers Buy in store
	FDG326P	Fairchild Semiconductor	MOSFET P-CH 20V 1.5A SC70-6 Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 7nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 467pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 480mW · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363		Additional information Find at suppliers Buy in store
	IRF1405STRR	International Rectifier	MOSFET N-CH 55V 131A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 131A · Input Capacitance (Ciss) @ Vds: 5480pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 200W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Additional information Find at suppliers Buy in store
	IPS09N03LA G	Infineon Technologies	MOSFET N-CH 25V 50A IPAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 13nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1642pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 63W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)		Additional information Find at suppliers Buy in store
	FQAF5N90	Fairchild Semiconductor	MOSFET N-CH 900V 4.1A TO-3PF Серия: QFET™ · Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 2.05A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.1A · Input Capacitance (Ciss) @ Vds: 1550pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Through Hole · Package / Case: TO-3PF-3		Additional information Find at suppliers Buy in store
	STP270N4F3	STMicroelectronics	MOSFET N-CH 40V 120A TO-220 Серия: STripFET™ · Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 150nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 120A · Input Capacitance (Ciss) @ Vds: 7400pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 330W · Mounting Type: Through Hole · Package / Case: TO-220		Additional information Find at suppliers Buy in store
	BST72A,112	NXP Semiconductors	MOSFET N-CH 100V 190MA SOT54 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 10 Ohm @ 150mA, 5V · Drain to Source Voltage (Vdss): 100V · Current - Continuous Drain (Id) @ 25° C: 190mA · Input Capacitance (Ciss) @ Vds: 40pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 830mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226		Additional information Find at suppliers Buy in store
	NTD50N03RG	ON Semiconductor	MOSFET N-CH 25V 7.8A IPAK Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 15nC @ 11.5V · Current - Continuous Drain (Id) @ 25° C: 7.8A · Input Capacitance (Ciss) @ Vds: 750pF @ 12V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)		Additional information Find at suppliers Buy in store
	2SK2607	Toshiba	MOSFET N-CH 800V 9A 2-16C1B Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 2160pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)		Additional information Find at suppliers Buy in store
	2SK0615	Panasonic - SSG	MOSFET N-CH 80V 500MA 3-SIP Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 80V · Current - Continuous Drain (Id) @ 25° C: 500mA · Input Capacitance (Ciss) @ Vds: 45pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Through Hole · Package / Case: M-Type		Additional information Find at suppliers Buy in store
	IRFP140N	International Rectifier	MOSFET N-CH 100V 33A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 52 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 94nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 33A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC		Additional information Find at suppliers Buy in store
	IRLZ34NL	International Rectifier	MOSFET N-CH 55V 30A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 25nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 880pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads)		Additional information Find at suppliers Buy in store
	PHD16N03LT,118	NXP Semiconductors	MOSFET N-CH 30V 16A SOT428 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 67 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 8.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 210pF @ 30V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 32.6W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Additional information Find at suppliers Buy in store
	HUFA75309P3	Fairchild Semiconductor	MOSFET N-CH 55V 19A TO-220AB Серия: UltraFET™ · Rds On (Max) @ Id, Vgs: 70 mOhm @ 19A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 24nC @ 20V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 55W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)		Additional information Find at suppliers Buy in store
	FQB4P40TM	Fairchild Semiconductor	MOSFET P-CH 400V 3.5A D2PAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 3.1 Ohm @ 1.75A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.5A · Input Capacitance (Ciss) @ Vds: 680pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.13W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Additional information Find at suppliers Buy in store
	NTD60N02R-035	ON Semiconductor	MOSFET N-CH 25V 8.5A IPAK Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 8.5A · Input Capacitance (Ciss) @ Vds: 1330pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.25W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)		Additional information Find at suppliers Buy in store
	BUK7524-55A,127	NXP Semiconductors	MOSFET N-CH 55V 47A TO220AB Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 24 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 55V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 1310pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 106W · Mounting Type: Through Hole · Package / Case: TO-220AB-3		Additional information Find at suppliers Buy in store
	NTD6600N-1G	ON Semiconductor	MOSFET N-CH 100V 12A IPAK Rds On (Max) @ Id, Vgs: 146 mOhm @ 6A, 5V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 20nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.28W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)		Additional information Find at suppliers Buy in store
	PHX23NQ10T,127	NXP Semiconductors	MOSFET N-CH 100V 13A TO220F Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 70 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 1187pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 27W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack		Additional information Find at suppliers Buy in store
	2SK2312(F)	Toshiba	MOSFET N-CH 60V 45A 2-10R1B Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 3350pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10R1B		Additional information Find at suppliers Buy in store
	PHD16N03T,118	NXP Semiconductors	MOSFET N-CH 30V 13.1A DPAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 100 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 5.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13.1A · Input Capacitance (Ciss) @ Vds: 180pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 32.6W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Additional information Find at suppliers Buy in store
	FQA6N70	Fairchild Semiconductor	MOSFET N-CH 700V 6.4A TO-3P Серия: QFET™ · Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 3.2A, 10V · Drain to Source Voltage (Vdss): 700V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.4A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 152W · Mounting Type: Through Hole · Package / Case: TO-3P-3 (Straight Leads)		Additional information Find at suppliers Buy in store
	HUFA75343P3	Fairchild Semiconductor	MOSFET N-CH 55V 75A TO-220AB Серия: UltraFET™ · Rds On (Max) @ Id, Vgs: 9 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 205nC @ 20V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 3000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 270W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)		Additional information Find at suppliers Buy in store
	FDS3570	Fairchild Semiconductor	MOSFET N-CH 80V 9A 8SOIC Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 76nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 2750pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Additional information Find at suppliers Buy in store
	2SK1542	Toshiba	MOSFET N-CH 60V 45A TO-220AB Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 400nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 3300pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220AB		Additional information Find at suppliers Buy in store

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