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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

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PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
FQA8N90CFairchild SemiconductorMOSFET N-CH 900V 8A TO-3P
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 2080pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 240W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P-3 (Straight Leads)
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IRFU3418PBFIRFU3418PBFInternational RectifierMOSFET N-CH 80V 70A I-PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 14 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 80V  ·  Gate Charge (Qg) @ Vgs: 94nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 3510pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.8W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IRFU9014NIRFU9014NInternational RectifierMOSFET P-CH 60V 5.1A I-PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.1A  ·  Input Capacitance (Ciss) @ Vds: 270pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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FQD7N10LTFFQD7N10LTFFairchild SemiconductorMOSFET N-CH 100V 5.8A DPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.9A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.8A  ·  Input Capacitance (Ciss) @ Vds: 290pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BTS113A E3045AInfineon TechnologiesMOSFET N-CH 60V 11.5A TO-220AB
Серия: TEMPFET®  ·  Rds On (Max) @ Id, Vgs: 170 mOhm @ 5.8A, 4.5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 11.5A  ·  Input Capacitance (Ciss) @ Vds: 560pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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IRFZ34NSIRFZ34NSInternational RectifierMOSFET N-CH 55V 29A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 40 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 29A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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MMDFS6N303R2MMDFS6N303R2ON SemiconductorMOSFET N-CH 30V 6A 8-SOIC
Серия: FETKY™  ·  Rds On (Max) @ Id, Vgs: 35 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 31.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 24V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SPB100N08S2-07SPB100N08S2-07Infineon TechnologiesMOSFET N-CH 75V 100A D2PAK
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 66A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 6020pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRLI510ATUFairchild SemiconductorMOSFET N-CH 100V 5.6A I2PAK
Rds On (Max) @ Id, Vgs: 440 mOhm @ 2.8A, 5V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 8nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.6A  ·  Input Capacitance (Ciss) @ Vds: 235pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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NTD95N02RGNTD95N02RGON SemiconductorMOSFET N-CH 24V 12A DPAK
Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 24V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRF7702IRF7702International RectifierMOSFET P-CH 12V 8A 8-TSSOP
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 14 mOhm @ 8A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 81nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 3470pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-TSSOP
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IRF634NPBFIRF634NPBFVishay/SiliconixMOSFET N-CH 250V 8A TO-220AB
Rds On (Max) @ Id, Vgs: 435 mOhm @ 4.8A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 620pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.8W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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HUFA76609D3SFairchild SemiconductorMOSFET N-CH 100V 10A DPAK
Серия: UltraFET™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 425pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 49W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BSS138N E6433Infineon TechnologiesMOSFET N-CH 60V 230MA SOT-23
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 1.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 230mA  ·  Input Capacitance (Ciss) @ Vds: 41pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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SFP9634SFP9634Fairchild SemiconductorMOSFET P-CH 250V 5A TO-220
Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 37nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 975pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRL1004STRRIRL1004STRRInternational RectifierMOSFET N-CH 40V 130A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 130A  ·  Input Capacitance (Ciss) @ Vds: 5330pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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NTJS3157NT4GNTJS3157NT4GON SemiconductorMOSFET N-CH 20V 3.2A SOT-363
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.2A  ·  Input Capacitance (Ciss) @ Vds: 500pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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NTMSD2P102LR2GNTMSD2P102LR2GON SemiconductorMOSFET P-CH 20V 2.3A 8-SOIC
Серия: FETKY™  ·  Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.3A  ·  Input Capacitance (Ciss) @ Vds: 750pF @ 16V  ·  FET Polarity: P-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 710mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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BSS138LT3BSS138LT3ON SemiconductorMOSFET N-CH 50V 200MA SOT-23
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V  ·  Drain to Source Voltage (Vdss): 50V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 225mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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IRL3103D1PBFIRL3103D1PBFInternational RectifierMOSFET N-CH 30V 64A TO-220AB
Серия: FETKY™  ·  Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 43nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 64A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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HUF75321D3Fairchild SemiconductorMOSFET N-CH 55V 20A IPAK
Серия: UltraFET™  ·  Rds On (Max) @ Id, Vgs: 36 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 20V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 680pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 93W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IRFZ44VSIRFZ44VSInternational RectifierMOSFET N-CH 60V 55A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 31A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 67nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 1812pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 115W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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HUFA76619D3STFairchild SemiconductorMOSFET N-CH 100V 18A DPAK
Серия: UltraFET™  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 29nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 767pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 75W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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FQAF9N50Fairchild SemiconductorMOSFET N-CH 500V 7.2A TO-3P
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 730 mOhm @ 3.6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 36nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.2A  ·  Input Capacitance (Ciss) @ Vds: 1450pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3PF-3
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NTD4854N-35GON SemiconductorMOSFET N-CH 25V 15.7A IPAK
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 49.2nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 15.7A  ·  Input Capacitance (Ciss) @ Vds: 4600pf @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.43W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
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