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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

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PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
MMDF3N02HDR2GON SemiconductorMOSFET PWR P-CH 20V 3.8A 8-SOIC
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.8A  ·  Input Capacitance (Ciss) @ Vds: 630pF @ 16V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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NTHS5441T1GON SemiconductorMOSFET PWR P-CH 3.9A 20V CHIPFET
Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.9A  ·  Input Capacitance (Ciss) @ Vds: 710pF @ 5V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-ChipFET™
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NTF5P03T3GON SemiconductorMOSFET PWR P-CH 5.2A 30V SOT223
Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.2A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.7A  ·  Input Capacitance (Ciss) @ Vds: 950pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.56W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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NTMS5P02R2GON SemiconductorMOSFET PWR P-CHAN 5.4A 20V 8SOIC
Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.4A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.95A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 16V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 790mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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NTMS10P02R2GON SemiconductorMOSFET PWR P-CHAN SGL 20V 8SOIC
Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 3640pF @ 16V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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NTTS2P03R2GON SemiconductorMOSFET PWR P-CHAN SGL 30V 8MICRO
Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.48A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.1A  ·  Input Capacitance (Ciss) @ Vds: 500pF @ 24V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 600mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
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IXKT70N60C5IXYSMOSFET TO-268
Drain to Source Voltage (Vdss): 600V  ·  Current - Continuous Drain (Id) @ 25° C: 68A  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: TO-268
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PN4121_D74ZPN4121_D74ZFairchild SemiconductorMOSFET TO-92
FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92
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VN10LPSTZVN10LPSTZDiodes/ZetexMOSFET VMOS N-CHAN TO92-3
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 270mA  ·  Input Capacitance (Ciss) @ Vds: 60pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 625mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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VN10LPSTOBVN10LPSTOBDiodes/ZetexMOSFET VMOS N-CHAN TO92-3
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 270mA  ·  Input Capacitance (Ciss) @ Vds: 60pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 625mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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NTLJF3117PT1GON SemiconductorMOSFET/SCHOTTKY 20V 4.1A 6-WDFN
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 6.2nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.3A  ·  Input Capacitance (Ciss) @ Vds: 531pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 710mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-WDFN
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NTLJF4156NT1GON SemiconductorMOSFET/SCHOTTKY N-CH 30V WDFN6
Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.5A  ·  Input Capacitance (Ciss) @ Vds: 427pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 710mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-WDFN
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NTHD4P02FT1GON SemiconductorMOSFET/SCHOTTKY P-CH 20V CHIPFET
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.2A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.2A  ·  Input Capacitance (Ciss) @ Vds: 300pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-ChipFET™
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ZXMNS3BM832TADiodes/ZetexMOSFET/SCHOTTKY30V/40V 8-MLP
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 2.9nc @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 314pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-MLP
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IFXH26N60QIXYSPOWER MOSFET, 600V, VDS,28 AMP
Drain to Source Voltage (Vdss): 600V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Through Hole
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HCT7000MTXVTT Electronics/Optek TechnologTRANSISTR MOS ENHANCE N-CHAN SMD
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 60pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 3.18mm x 2.67mm x 1.37mm
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HCT7000MTT Electronics/Optek TechnologTRANSISTR MOS ENHANCE N-CHAN SMD
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 60pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 3.18mm x 2.67mm x 1.37mm
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HCT7000MTXTT Electronics/Optek TechnologTRANSISTR MOS ENHANCE N-CHAN SMD
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 60pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 3.18mm x 2.67mm x 1.37mm
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