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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
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PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
IRFBG20STRLIRFBG20STRLVishay/SiliconixMOSFET N-CH 1000V 1.4A D2PAK
Rds On (Max) @ Id, Vgs: 11 Ohm @ 840mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.4A  ·  Input Capacitance (Ciss) @ Vds: 500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 54W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFBE30IRFBE30Vishay/SiliconixMOSFET N-CH 800V 4.1A TO-220AB
Rds On (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 78nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.1A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRF9640IRF9640Vishay/SiliconixMOSFET P-CH 200V 11A TO-220AB
Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRF620SPBFIRF620SPBFVishay/SiliconixMOSFET N-CH 200V 5.2A D2PAK
Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.2A  ·  Input Capacitance (Ciss) @ Vds: 260pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFB18N50KPBFIRFB18N50KPBFVishay/SiliconixMOSFET N-CH 500V 17A TO-220AB
Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 120nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 2830pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 220W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRF744PBFIRF744PBFVishay/SiliconixMOSFET N-CH 450V 8.8A TO-220AB
Rds On (Max) @ Id, Vgs: 630 mOhm @ 5.3A, 10V  ·  Drain to Source Voltage (Vdss): 450V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.8A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRF9510STRLIRF9510STRLVishay/SiliconixMOSFET P-CH 100V 4A D2PAK
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 8.7nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4A  ·  Input Capacitance (Ciss) @ Vds: 200pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFI540GPBFIRFI540GPBFVishay/SiliconixMOSFET N-CH 100V 17A TO220FP
Rds On (Max) @ Id, Vgs: 77 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 72nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 48W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRF540SPBFIRF540SPBFVishay/SiliconixMOSFET N-CH 100V 28A D2PAK
Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 72nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF730IRF730Vishay/SiliconixMOSFET N-CH 400V 5.5A TO-220AB
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRFI9510GIRFI9510GVishay/SiliconixMOSFET P-CH 100V 3.2A TO-220FP
Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 3.2A  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRFS11N50AIRFS11N50AVishay/SiliconixMOSFET N-CH 500V 11A D2PAK
Rds On (Max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 52nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1423pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 170W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFU9214PBFIRFU9214PBFVishay/SiliconixMOSFET P-CH 250V 2.7A I-PAK
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.7A  ·  Input Capacitance (Ciss) @ Vds: 220pf @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IRL640STRRPBFIRL640STRRPBFVishay/SiliconixMOSFET N-CH 200V 17A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 5V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFU9110Vishay/SiliconixMOSFET P-CH 100V 3.1A I-PAK
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 8.7nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.1A  ·  Input Capacitance (Ciss) @ Vds: 200pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IRF9510SIRF9510SVishay/SiliconixMOSFET P-CH 100V 4A D2PAK
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 8.7nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4A  ·  Input Capacitance (Ciss) @ Vds: 200pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFR320PBFVishay/SiliconixMOSFET N-CH 400V 3.1A DPAK
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.9A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.1A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRLD120IRLD120Vishay/SiliconixMOSFET N-CH 100V 1.3A 4-DIP
Rds On (Max) @ Id, Vgs: 270 mOhm @ 780mA, 5V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.3A  ·  Input Capacitance (Ciss) @ Vds: 490pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
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