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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

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PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
IRF7811TRIRF7811TRInternational RectifierMOSFET N-CH 28V 14A 8-SOIC
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 4.5V  ·  Drain to Source Voltage (Vdss): 28V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 16V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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NTD65N03RON SemiconductorMOSFET N-CH 25V 9.5A IPAK
Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 9.5A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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STB16NK65Z-SSTB16NK65Z-SSTMicroelectronicsMOSFET N-CH 650V 13A I2SPAK
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 89nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 2750pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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FQD10N20CTFFQD10N20CTFFairchild SemiconductorMOSFET N-CH 200V 7.8A DPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 360 mOhm @ 3.9A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.8A  ·  Input Capacitance (Ciss) @ Vds: 510pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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RFD8P05SMFairchild SemiconductorMOSFET P-CH 50V 8A TO-252AA
Rds On (Max) @ Id, Vgs: 300 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 20V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 48W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STF8NK85ZSTF8NK85ZSTMicroelectronicsMOSFET N-CH 850V 6.7A TO-220FP
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3.35A, 10V  ·  Drain to Source Voltage (Vdss): 850V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.7A  ·  Input Capacitance (Ciss) @ Vds: 1870pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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FDB3672Fairchild SemiconductorMOSFET N-CH 100V 44A D2PAK
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 28 mOhm @ 44A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 44A  ·  Input Capacitance (Ciss) @ Vds: 1710pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 120W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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APT10M11B2VFRGMicrosemi-PPGMOSFET N-CH 100V 100A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 450nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 10300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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FQB13N10LTMFairchild SemiconductorMOSFET N-CH 100V 12.8A D2PAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 6.4A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 12.8A  ·  Input Capacitance (Ciss) @ Vds: 520pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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NTD4865N-1GON SemiconductorMOSFET N-CH 25V 8.5A IPAK
Rds On (Max) @ Id, Vgs: 10.9 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 10.8nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 8.5A  ·  Input Capacitance (Ciss) @ Vds: 827pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.27W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
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BUK7624-55,118BUK7624-55,118NXP SemiconductorsMOSFET N-CH 55V 45A SOT404
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 24 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 103W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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FDP10AN06A0FDP10AN06A0Fairchild SemiconductorMOSFET N-CH 60V 75A TO-220AB
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 75A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 37nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 1840pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 135W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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NTB75N03-6T4GON SemiconductorMOSFET N-CH 30V 75A D2PAK
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 37.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 75nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5635pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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2SK29532SK2953ToshibaMOSFET N-CH 600V 15A 2-16F1B
Rds On (Max) @ Id, Vgs: 400 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 3520pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16F1B
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HUF75637P3HUF75637P3Fairchild SemiconductorMOSFET N-CH 100V 44A TO-220AB
Серия: UltraFET™  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 44A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 108nC @ 20V  ·  Current - Continuous Drain (Id) @ 25° C: 44A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 155W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRF7523D1IRF7523D1International RectifierMOSFET N-CH 30V 2.7A MICRO-8
Серия: FETKY™  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.7A  ·  Input Capacitance (Ciss) @ Vds: 210pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 1.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: Micro8™
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IPB06N03LBIPB06N03LBInfineon TechnologiesMOSFET N-CH 30V 50A D2PAK
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 2782pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 83W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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APTM100U13SGMicrosemi-PPGMOSFET N-CH 1000V 65A J3
Rds On (Max) @ Id, Vgs: 145 mOhm @ 32.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 2000nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 65A  ·  Input Capacitance (Ciss) @ Vds: 31600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1250W  ·  Mounting Type: Chassis Mount  ·  Package / Case: J3 Module
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