Log in    Register
ChipFind Component Selection Catalog
For example: transistor, max232, lt319a
  

Discrete Semiconductor Products  ·  MOSFETs - Single
 
2SK2953

- Dimensional Drawing
- Dimensional Drawing

2SK2953 — MOSFET N-CH 600V 15A 2-16F1B

ManufacturerToshiba
Rds On (Max) @ Id, Vgs400 mOhm @ 8A, 10V
Drain to Source Voltage (Vdss)600V
Gate Charge (Qg) @ Vgs80nC @ 10V
Current - Continuous Drain (Id) @ 25° C15A
Input Capacitance (Ciss) @ Vds3520pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max90W
Mounting TypeThrough Hole
Package / Case2-16F1B
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
TPC8048-H(TE12L,Q)TPC8048-H(TE12L,Q)ToshibaMOSFET N-CH 60V 16A 8-SOP
Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
from 0,99
from 1,91		Additional information
Find at suppliers
2SK2967(F)ToshibaMOSFET N-CH 250V 30A 2-16C1B
Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 132nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 5400pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
from 3,89Additional information
Find at suppliers
2SK2613(F)ToshibaMOSFET N-CH 1KV 8A 2-16C1B
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 65nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 2000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
from 2,59Additional information
Find at suppliers
2SK2376(Q)ToshibaMOSFET N-CH 60V 45A 2-10S1B
Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 3350pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10S1B
from 1,45Additional information
Find at suppliers
TK70A06J1(Q)ToshibaMOSFET N-CH 60V 70A SC-67
Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 35A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 87nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 5450pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
from 1,76Additional information
Find at suppliers
TPC8051-H(TE12L,Q)TPC8051-H(TE12L,Q)ToshibaMOSFET N-CH 80V 13A 8-SOP
Drain to Source Voltage (Vdss): 80V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
from 1,12
from 2,15		Additional information
Find at suppliers
2SK2233(F)ToshibaMOSFET N-CH 60V 45A 2-16C1B
Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
from 1,47Additional information
Find at suppliers
TPC8114(TE12L,Q,M)TPC8114(TE12L,Q,M)ToshibaMOSFET P-CH 30V 18A 8SOIC
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 180nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 7480pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC
from 0,96
from 1,84		Additional information
Find at suppliers
TPCA8003-H(TE12LQMToshibaMOSFET N-CH 30V 35A SOP-8 ADV
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 1465pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-5Q1A
from 0,68Additional information
Find at suppliers
TPC8115(TE12L,Q,M)ToshibaMOSFET P-CH 20V 10A SOP8 2-6J1B
Rds On (Max) @ Id, Vgs: 10 mOhm @ 5A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 115nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 9130pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-6J1B
from 0,55Additional information
Find at suppliers
2SK4105(Q,T)ToshibaMOSFET N-CH 500V 8A TO-220
Drain to Source Voltage (Vdss): 500V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
from 1,06Additional information
Find at suppliers
2SK3799(Q)ToshibaMOSFET N-CH 900V 8A SC-67
Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 2200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
from 2,32Additional information
Find at suppliers
2SK3127(TE24L)ToshibaMOSFET N-CH 30V 45A TO-220FL
Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 2300pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 65W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FL
Additional information
Find at suppliers
2SK2173(F)ToshibaMOSFET N-CH 60V 50A 2-16C1B
Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 3550pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
from 1,99Additional information
Find at suppliers
2SK3940(Q)ToshibaMOSFET N-CH 75V 70A SC-67
Rds On (Max) @ Id, Vgs: 7 mOhm @ 35A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 12500pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
from 4,37Additional information
Find at suppliers
2SK3128ToshibaMOSFET N-CH 30V 60A 2-16C1B
Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 2300pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
Additional information
Find at suppliers
2SK2699(F,T)ToshibaMOSFET N-CH 600V 12A 2-16C1B
Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 58nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 2600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
from 2,14Additional information
Find at suppliers
TPC8018-H(TE12LQM)ToshibaMOSFET N-CH 30V 18A SOP8 2-6J1B
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 2265pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-6J1B
from 0,75Additional information
Find at suppliers
TPC6006-H(TE85L,F)ToshibaMOSFET N-CH 40V 3.9A VS6 2-3T1A
Rds On (Max) @ Id, Vgs: 75 mOhm @ 1.9A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 4.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.9A  ·  Input Capacitance (Ciss) @ Vds: 251pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-3T1A
from 0,19Additional information
Find at suppliers
TPCA8036-H(TE12L,QToshibaMOSFET N-CH 30V 38A 8SOIC ADV
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 19A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 4600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC
from 1,11Additional information
Find at suppliers
2SK2776(TE24L)ToshibaMOSFET N-CH 500V 8A TO-220FL
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 65W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FL
from 1,42Additional information
Find at suppliers
TK15A50D(Q,M)ToshibaMOSFET N-CH 500V 15A SC-67
Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 2300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
from 2,21Additional information
Find at suppliers
2SK3669(TE16L1,NQ)ToshibaMOSFET N-CH 100V 10A PW-MOLD
Rds On (Max) @ Id, Vgs: 125 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 480pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-7J1B
from 0,84Additional information
Find at suppliers
2SK4003(Q)ToshibaMOSFET N-CH 600V 3A PW-MOLD
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 20W  ·  Mounting Type: Through Hole
from 0,72Additional information
Find at suppliers
TPC8A03-H(TE12LQM)ToshibaMOSFET N-CH SBD 17A SOP8 2-6J1B
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 36nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 3430pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-6J1B
from 0,62Additional information
Find at suppliers

Search «2SK2953» in:  Google   Yahoo   MSN Report an error  

© 2006 — 2024 ChipFind Ltd.
Contact phone, e-mail, ICQ		 Catalog with parameters for 1,401,534 components Register • Advertising