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Discrete Semiconductor Products  ·  MOSFETs - Single

 
IRC540PBF

IRC540PBF — MOSFET N-CH 100V 28A TO-220-5

ManufacturerVishay/Siliconix
Harmful substancesRoHS   Lead-free
SeriesHEXFET®
Rds On (Max) @ Id, Vgs77 mOhm @ 17A, 10V
Drain to Source Voltage (Vdss)100V
Gate Charge (Qg) @ Vgs69nC @ 10V
Current - Continuous Drain (Id) @ 25° C28A
Input Capacitance (Ciss) @ Vds1300pF @ 25V
FET PolarityN-Channel
FET FeatureCurrent Sensing
Power - Max150W
Mounting TypeThrough Hole
Package / CaseTO-220-5 (Straight Leads)
Found under name*IRC540PBF
Analogous by characteristics
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IRF7822TRRVishay/SiliconixMOSFET N-CH 30V 18A 8-SOIC
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 5500pF @ 16V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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IRF9Z30STRLIRF9Z30STRLVishay/SiliconixMOSFET P-CH 50V 18A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFIBC20GIRFIBC20GVishay/SiliconixMOSFET N-CH 600V 1.7A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRL3102LVishay/SiliconixMOSFET N-CH 20V 61A TO-262
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 13 mOhm @ 37A, 7V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 58nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 61A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 89W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IRF2807ZSTRLIRF2807ZSTRLVishay/SiliconixMOSFET N-CH 75V 75A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 3270pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 170W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFIB7N50LPBFIRFIB7N50LPBFVishay/SiliconixMOSFET N-CH 500V 6.8A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.1A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 92nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.8A  ·  Input Capacitance (Ciss) @ Vds: 2220pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 46W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRC530PBFVishay/SiliconixMOSFET N-CH 100V 14A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 88W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRFB9N30AIRFB9N30AVishay/SiliconixMOSFET N-CH 300V 9.3A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.6A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.3A  ·  Input Capacitance (Ciss) @ Vds: 920pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 96W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRFR2605TRRVishay/SiliconixMOSFET N-CH 55V 19A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 420pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRFZ34ELVishay/SiliconixMOSFET N-CH 60V 28A TO-262
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 42 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 680pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 68W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IRFZ24IRFZ24Vishay/SiliconixMOSFET N-CH 60V 17A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 640pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRF1405ZTRRIRF1405ZTRRVishay/SiliconixMOSFET N-CH 55V 75A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 75A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 180nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 4780pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 230W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRL3302LVishay/SiliconixMOSFET N-CH 20V 39A TO-262
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 20 mOhm @ 23A, 7V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 39A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 57W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IRFR9010TRVishay/SiliconixMOSFET P-CH 50V 5.3A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 9.1nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.3A  ·  Input Capacitance (Ciss) @ Vds: 240pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRC740IRC740Vishay/SiliconixMOSFET N-CH 400V 10A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRL2203SIRL2203SVishay/SiliconixMOSFET N-CH 30V 100A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 3500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRLR024TRRVishay/SiliconixMOSFET N-CH 60V 14A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 870pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRFU4105ZTRVishay/SiliconixMOSFET N-CH 55V 30A I-PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 740pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 48W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IRF9Z30PBFIRF9Z30PBFVishay/SiliconixMOSFET P-CH 50V 18A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRFIB5N65AIRFIB5N65AVishay/SiliconixMOSFET N-CH 650V 5.1A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 930 mOhm @ 3.1A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.1A  ·  Input Capacitance (Ciss) @ Vds: 1417pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRFB9N30APBFIRFB9N30APBFVishay/SiliconixMOSFET N-CH 300V 9.3A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.6A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.3A  ·  Input Capacitance (Ciss) @ Vds: 920pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 96W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRFS9N60ATRLIRFS9N60ATRLVishay/SiliconixMOSFET N-CH 600V 9.2A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 49nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.2A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 170W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRC634PBFIRC634PBFVishay/SiliconixMOSFET N-CH 250V 8.1A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.9A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.1A  ·  Input Capacitance (Ciss) @ Vds: 770pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRL2203STRRIRL2203STRRVishay/SiliconixMOSFET N-CH 30V 100A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 3500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRC730IRC730Vishay/SiliconixMOSFET N-CH 400V 5.5A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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