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Discrete Semiconductor Products  ·  MOSFETs - Single

 

IRLR024TRR — MOSFET N-CH 60V 14A DPAK

ManufacturerVishay/Siliconix
SeriesHEXFET®
Rds On (Max) @ Id, Vgs100 mOhm @ 8.4A, 5V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs18nC @ 5V
Current - Continuous Drain (Id) @ 25° C14A
Input Capacitance (Ciss) @ Vds870pF @ 25V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max2.5W
Mounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63
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Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 230 mOhm @ 13.8A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 115nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 3400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 340W  ·  Mounting Type: Through Hole  ·  Package / Case: Super-220™
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IRFP354PBFIRFP354PBFVishay/SiliconixMOSFET N-CH 450V 14A TO-247AC
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 450V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 2700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRC540PBFIRC540PBFVishay/SiliconixMOSFET N-CH 100V 28A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 69nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRFI840GPBFIRFI840GPBFVishay/SiliconixMOSFET N-CH 500V 4.6A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 850 mOhm @ 2.8A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 67nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.6A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRC634IRC634Vishay/SiliconixMOSFET N-CH 250V 8.1A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.9A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.1A  ·  Input Capacitance (Ciss) @ Vds: 770pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRFZ30PBFIRFZ30PBFVishay/SiliconixMOSFET N-CH 50V 30A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 75W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRFBA22N50APBFIRFBA22N50APBFVishay/SiliconixMOSFET N-CH 500V 24A SUPER-220
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 230 mOhm @ 13.8A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 115nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 3400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 340W  ·  Mounting Type: Through Hole  ·  Package / Case: Super-220™
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IRCZ24Vishay/SiliconixMOSFET N-CH 55V 17A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 720pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRFZ20PBFIRFZ20PBFVishay/SiliconixMOSFET N-CH 50V 15A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A. 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRL3303D1STRRIRL3303D1STRRVishay/SiliconixMOSFET N-CH 30V 38A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 870pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 68W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 9.1nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.3A  ·  Input Capacitance (Ciss) @ Vds: 240pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 24 mOhm @ 32A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRC830IRC830Vishay/SiliconixMOSFET N-CH 500V 4.5A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.5A  ·  Input Capacitance (Ciss) @ Vds: 610pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRFI710GIRFI710GVishay/SiliconixMOSFET N-CH 400V 1.6A TO220FP
Series: HEXFET®  ·  Drain to Source Voltage (Vdss): 400V  ·  Current - Continuous Drain (Id) @ 25° C: 1.6A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRFPC30IRFPC30Vishay/SiliconixMOSFET N-CH 600V 4.3A TO-247AC
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.6A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.3A  ·  Input Capacitance (Ciss) @ Vds: 630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 89nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.7A  ·  Input Capacitance (Ciss) @ Vds: 2160pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRC840PBFIRC840PBFVishay/SiliconixMOSFET N-CH 500V 8A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 67nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRC730PBFIRC730PBFVishay/SiliconixMOSFET N-CH 400V 5.5A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRFIB6N60APBFIRFIB6N60APBFVishay/SiliconixMOSFET N-CH 600V 5.5A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 49nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRFSL31N20DTRRVishay/SiliconixMOSFET N-CH 200V 31A TO-262
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 82 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 31A  ·  Input Capacitance (Ciss) @ Vds: 2370pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IRFP360IRFP360Vishay/SiliconixMOSFET N-CH 400V 23A TO-247AC
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 210nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRF2807ZSTRLIRF2807ZSTRLVishay/SiliconixMOSFET N-CH 75V 75A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 3270pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 170W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 5500pF @ 16V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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IRFIBC20GIRFIBC20GVishay/SiliconixMOSFET N-CH 600V 1.7A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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