Log in    Register
ChipFind Component Selection Catalog
For example: transistor, max232, lt319a
  

Discrete Semiconductor Products  ·  MOSFETs - Single
 
IRFBA22N50APBF

- Dimensional Drawing

IRFBA22N50APBF — MOSFET N-CH 500V 24A SUPER-220

ManufacturerVishay/Siliconix
Harmful substancesRoHS   Lead-free
SeriesHEXFET®
Rds On (Max) @ Id, Vgs230 mOhm @ 13.8A, 10V
Drain to Source Voltage (Vdss)500V
Gate Charge (Qg) @ Vgs115nC @ 10V
Current - Continuous Drain (Id) @ 25° C24A
Input Capacitance (Ciss) @ Vds3400pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max340W
Mounting TypeThrough Hole
Package / CaseSuper-220™
Found under name*IRFBA22N50APBF
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
IRF7822TRRVishay/SiliconixMOSFET N-CH 30V 18A 8-SOIC
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 5500pF @ 16V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 1,17Additional information
Find at suppliers
IRF9Z30STRLIRF9Z30STRLVishay/SiliconixMOSFET P-CH 50V 18A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
Additional information
Find at suppliers
IRFIBC20GIRFIBC20GVishay/SiliconixMOSFET N-CH 600V 1.7A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
from 2,82Additional information
Find at suppliers
IRL3102LVishay/SiliconixMOSFET N-CH 20V 61A TO-262
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 13 mOhm @ 37A, 7V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 58nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 61A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 89W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 1,33Additional information
Find at suppliers
IRF2807ZSTRLIRF2807ZSTRLVishay/SiliconixMOSFET N-CH 75V 75A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 3270pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 170W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 1,18Additional information
Find at suppliers
IRFIB7N50LPBFIRFIB7N50LPBFVishay/SiliconixMOSFET N-CH 500V 6.8A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.1A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 92nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.8A  ·  Input Capacitance (Ciss) @ Vds: 2220pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 46W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Additional information
Find at suppliers
IRC530PBFVishay/SiliconixMOSFET N-CH 100V 14A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 88W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
Additional information
Find at suppliers
IRFB9N30AIRFB9N30AVishay/SiliconixMOSFET N-CH 300V 9.3A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.6A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.3A  ·  Input Capacitance (Ciss) @ Vds: 920pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 96W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
Additional information
Find at suppliers
IRFR2605TRRVishay/SiliconixMOSFET N-CH 55V 19A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 420pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
Additional information
Find at suppliers
IRFZ34ELVishay/SiliconixMOSFET N-CH 60V 28A TO-262
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 42 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 680pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 68W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
Additional information
Find at suppliers
IRFZ24IRFZ24Vishay/SiliconixMOSFET N-CH 60V 17A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 640pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 1,80Additional information
Find at suppliers
IRF1405ZTRRIRF1405ZTRRVishay/SiliconixMOSFET N-CH 55V 75A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 75A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 180nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 4780pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 230W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 1,45Additional information
Find at suppliers
IRL3302LVishay/SiliconixMOSFET N-CH 20V 39A TO-262
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 20 mOhm @ 23A, 7V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 39A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 57W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 0,78Additional information
Find at suppliers
IRFR9010TRVishay/SiliconixMOSFET P-CH 50V 5.3A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 9.1nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.3A  ·  Input Capacitance (Ciss) @ Vds: 240pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 1,34Additional information
Find at suppliers
IRFR010TRRVishay/SiliconixMOSFET N-CH 50V 8.2A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.2A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 0,47Additional information
Find at suppliers
IRF5801Vishay/SiliconixMOSFET N-CH 200V 600MA 6-TSOP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 360mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 3.9nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 600mA  ·  Input Capacitance (Ciss) @ Vds: 88pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
Additional information
Find at suppliers
IRLR014TRRVishay/SiliconixMOSFET N-CH 60V 7.7A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 8.4nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.7A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 0,54Additional information
Find at suppliers
IRC640PBFIRC640PBFVishay/SiliconixMOSFET N-CH 200V 18A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
Additional information
Find at suppliers
IRFR010TRLVishay/SiliconixMOSFET N-CH 50V 8.2A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.2A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 1,29Additional information
Find at suppliers
IRFU9010PBFIRFU9010PBFVishay/SiliconixMOSFET P-CH 50V 5.3A I-PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 9.1nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.3A  ·  Input Capacitance (Ciss) @ Vds: 240pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
from 0,55
from 1,65		Additional information
Find at suppliers
IRFD010IRFD010Vishay/SiliconixMOSFET N-CH 50V 1.7A 4-DIP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 860mA, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
from 1,24Additional information
Find at suppliers
IRL3502LVishay/SiliconixMOSFET N-CH 20V 110A TO-262
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 110A  ·  Input Capacitance (Ciss) @ Vds: 4700pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 140W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 1,92Additional information
Find at suppliers
IRCZ34PBFIRCZ34PBFVishay/SiliconixMOSFET N-CH 60V 30A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 46nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 88W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
Additional information
Find at suppliers
IRFD020IRFD020Vishay/SiliconixMOSFET N-CH 50V 2.4A 4-DIP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.4A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.4A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
Additional information
Find at suppliers
IRFD010PBFIRFD010PBFVishay/SiliconixMOSFET N-CH 50V 1.7A 4-DIP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 860mA, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
from 0,50
from 1,50		Additional information
Find at suppliers

Search «IRFBA22N50APBF» in:  Google   Yahoo   MSN Report an error  

© 2006 — 2024 ChipFind Ltd.
Contact phone, e-mail, ICQ		 Catalog with parameters for 1,401,534 components Register • Advertising