Discrete Semiconductor Products · MOSFETs - Single

IRFZ24 — MOSFET N-CH 60V 17A TO-220AB

Manufacturer	Vishay/Siliconix

Series	HEXFET®
Rds On (Max) @ Id, Vgs	100 mOhm @ 10A, 10V
Drain to Source Voltage (Vdss)	60V
Gate Charge (Qg) @ Vgs	25nC @ 10V
Current - Continuous Drain (Id) @ 25° C	17A
Input Capacitance (Ciss) @ Vds	640pF @ 25V
FET Polarity	N-Channel
FET Feature	Standard
Power - Max	60W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Found under name	*IRFZ24

Analogous by characteristics

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	IRFBC20	Vishay/Siliconix	MOSFET N-CH 600V 2.2A TO-220AB Series: HEXFET® · Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.2A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	from 2,66	Additional information Find at suppliers
	IRFZ40	Vishay/Siliconix	MOSFET N-CH 50V 35A TO-220AB Series: HEXFET® · Rds On (Max) @ Id, Vgs: 28 mOhm @ 29A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 3000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	from 2,89	Additional information Find at suppliers
	IRFZ34ESTRL	Vishay/Siliconix	MOSFET N-CH 60V 28A D2PAK Series: HEXFET® · Rds On (Max) @ Id, Vgs: 42 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 680pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 68W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Additional information Find at suppliers
	IRF9Z20PBF	Vishay/Siliconix	MOSFET P-CH 50V 9.7A TO-220AB Series: HEXFET® · Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 26nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.7A · Input Capacitance (Ciss) @ Vds: 480pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	from 0,77 from 1,97	Additional information Find at suppliers
	IRFZ24L	Vishay/Siliconix	MOSFET N-CH 60V 17A TO-262 Series: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 640pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	from 0,81	Additional information Find at suppliers
	IRFR9010	Vishay/Siliconix	MOSFET P-CH 50V 5.3A DPAK Series: HEXFET® · Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 9.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.3A · Input Capacitance (Ciss) @ Vds: 240pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	from 1,34	Additional information Find at suppliers
	IRFIBC20G	Vishay/Siliconix	MOSFET N-CH 600V 1.7A TO220FP Series: HEXFET® · Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB	from 2,82	Additional information Find at suppliers
	IRF2807ZSTRL	Vishay/Siliconix	MOSFET N-CH 75V 75A D2PAK Series: HEXFET® · Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 3270pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 170W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	from 1,18	Additional information Find at suppliers
	IRF7822TRR	Vishay/Siliconix	MOSFET N-CH 30V 18A 8-SOIC Series: HEXFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 60nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 5500pF @ 16V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	from 1,17	Additional information Find at suppliers
	IRF9Z30STRL	Vishay/Siliconix	MOSFET P-CH 50V 18A D2PAK Series: HEXFET® · Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 900pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Additional information Find at suppliers
	IRL3102L	Vishay/Siliconix	MOSFET N-CH 20V 61A TO-262 Series: HEXFET® · Rds On (Max) @ Id, Vgs: 13 mOhm @ 37A, 7V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 58nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 61A · Input Capacitance (Ciss) @ Vds: 2500pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 89W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	from 1,33	Additional information Find at suppliers
	IRFR2605TRR	Vishay/Siliconix	MOSFET N-CH 55V 19A DPAK Series: HEXFET® · Rds On (Max) @ Id, Vgs: 85 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 420pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Additional information Find at suppliers
	IRFIB7N50LPBF	Vishay/Siliconix	MOSFET N-CH 500V 6.8A TO220FP Series: HEXFET® · Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.1A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 92nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.8A · Input Capacitance (Ciss) @ Vds: 2220pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 46W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB		Additional information Find at suppliers
	IRFB9N30A	Vishay/Siliconix	MOSFET N-CH 300V 9.3A TO-220AB Series: HEXFET® · Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 300V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.3A · Input Capacitance (Ciss) @ Vds: 920pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 96W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)		Additional information Find at suppliers
	IRC530PBF	Vishay/Siliconix	MOSFET N-CH 100V 14A TO-220-5 Series: HEXFET® · Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 26nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 88W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads)		Additional information Find at suppliers
	IRFZ34EL	Vishay/Siliconix	MOSFET N-CH 60V 28A TO-262 Series: HEXFET® · Rds On (Max) @ Id, Vgs: 42 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 680pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 68W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)		Additional information Find at suppliers
	IRFZ44R	Vishay/Siliconix	MOSFET N-CH 60V 50A TO-220AB Series: HEXFET® · Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	from 2,89	Additional information Find at suppliers
	IRFD9010PBF	Vishay/Siliconix	MOSFET P-CH 50V 1.1A 4-DIP Series: HEXFET® · Rds On (Max) @ Id, Vgs: 500 mOhm @ 580mA, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 11nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.1A · Input Capacitance (Ciss) @ Vds: 240pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 1W · Mounting Type: Through Hole · Package / Case: 4-DIP, HVMDIP	from 0,50 from 1,50	Additional information Find at suppliers
	IRF5801	Vishay/Siliconix	MOSFET N-CH 200V 600MA 6-TSOP Series: HEXFET® · Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 360mA, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 3.9nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 600mA · Input Capacitance (Ciss) @ Vds: 88pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 6-TSOP		Additional information Find at suppliers
	IRFR010TRR	Vishay/Siliconix	MOSFET N-CH 50V 8.2A DPAK Series: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 10nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.2A · Input Capacitance (Ciss) @ Vds: 250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	from 0,47	Additional information Find at suppliers
	IRLR014TRR	Vishay/Siliconix	MOSFET N-CH 60V 7.7A DPAK Series: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 8.4nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 7.7A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	from 0,54	Additional information Find at suppliers
	IRC640PBF	Vishay/Siliconix	MOSFET N-CH 200V 18A TO-220-5 Series: HEXFET® · Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads)		Additional information Find at suppliers
	IRFD010	Vishay/Siliconix	MOSFET N-CH 50V 1.7A 4-DIP Series: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 860mA, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1W · Mounting Type: Through Hole · Package / Case: 4-DIP, HVMDIP	from 1,24	Additional information Find at suppliers
	IRCZ34PBF	Vishay/Siliconix	MOSFET N-CH 60V 30A TO-220-5 Series: HEXFET® · Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 46nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 88W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads)		Additional information Find at suppliers
	IRL3502L	Vishay/Siliconix	MOSFET N-CH 20V 110A TO-262 Series: HEXFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 110nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 110A · Input Capacitance (Ciss) @ Vds: 4700pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	from 1,92	Additional information Find at suppliers

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