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Discrete Semiconductor Products  ·  MOSFETs - Single
 
IRF9Z30PBF

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- Dimensional Drawing

IRF9Z30PBF — MOSFET P-CH 50V 18A TO-220AB

ManufacturerVishay/Siliconix
Harmful substancesRoHS   Lead-free
SeriesHEXFET®
Rds On (Max) @ Id, Vgs140 mOhm @ 9.3A, 10V
Drain to Source Voltage (Vdss)50V
Gate Charge (Qg) @ Vgs39nC @ 10V
Current - Continuous Drain (Id) @ 25° C18A
Input Capacitance (Ciss) @ Vds900pF @ 25V
FET PolarityP-Channel
FET FeatureStandard
Power - Max74W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
Found under name*IRF9Z30PBF
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
IRC740IRC740Vishay/SiliconixMOSFET N-CH 400V 10A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
from 1,47
from 3,59		Additional information
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IRFU4105ZTRVishay/SiliconixMOSFET N-CH 55V 30A I-PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 740pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 48W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
from 0,52Additional information
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IRFB9N30APBFIRFB9N30APBFVishay/SiliconixMOSFET N-CH 300V 9.3A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.6A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.3A  ·  Input Capacitance (Ciss) @ Vds: 920pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 96W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRFS9N60ATRLIRFS9N60ATRLVishay/SiliconixMOSFET N-CH 600V 9.2A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 49nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.2A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 170W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 4,25Additional information
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IRFIB5N65AIRFIB5N65AVishay/SiliconixMOSFET N-CH 650V 5.1A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 930 mOhm @ 3.1A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.1A  ·  Input Capacitance (Ciss) @ Vds: 1417pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
from 4,96Additional information
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IRL2203SIRL2203SVishay/SiliconixMOSFET N-CH 30V 100A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 3500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRLR024TRRVishay/SiliconixMOSFET N-CH 60V 14A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 870pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 0,61Additional information
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IRC634PBFIRC634PBFVishay/SiliconixMOSFET N-CH 250V 8.1A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.9A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.1A  ·  Input Capacitance (Ciss) @ Vds: 770pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
from 0,83
from 2,11		Additional information
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IRL2203STRRIRL2203STRRVishay/SiliconixMOSFET N-CH 30V 100A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 3500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,09Additional information
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IRFIB7N50APBFIRFIB7N50APBFVishay/SiliconixMOSFET N-CH 500V 6.6A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 520 mOhm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 52nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.6A  ·  Input Capacitance (Ciss) @ Vds: 1423pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
from 1,84
from 4,50		Additional information
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IRFR010TRRVishay/SiliconixMOSFET N-CH 50V 8.2A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.2A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRF5801Vishay/SiliconixMOSFET N-CH 200V 600MA 6-TSOP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 360mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 3.9nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 600mA  ·  Input Capacitance (Ciss) @ Vds: 88pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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IRC640PBFIRC640PBFVishay/SiliconixMOSFET N-CH 200V 18A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRLR014TRRVishay/SiliconixMOSFET N-CH 60V 7.7A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 8.4nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.7A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRFD010IRFD010Vishay/SiliconixMOSFET N-CH 50V 1.7A 4-DIP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 860mA, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
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IRCZ34PBFIRCZ34PBFVishay/SiliconixMOSFET N-CH 60V 30A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 46nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 88W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRL3502LVishay/SiliconixMOSFET N-CH 20V 110A TO-262
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 110A  ·  Input Capacitance (Ciss) @ Vds: 4700pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 140W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 1,92Additional information
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IRFD020IRFD020Vishay/SiliconixMOSFET N-CH 50V 2.4A 4-DIP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.4A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.4A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
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IRFU9010PBFIRFU9010PBFVishay/SiliconixMOSFET P-CH 50V 5.3A I-PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 9.1nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.3A  ·  Input Capacitance (Ciss) @ Vds: 240pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
from 0,55
from 1,65		Additional information
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IRFR010TRLVishay/SiliconixMOSFET N-CH 50V 8.2A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.2A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 1,29Additional information
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IRL2203STRLIRL2203STRLVishay/SiliconixMOSFET N-CH 30V 100A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 3500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,09Additional information
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IRFBC20IRFBC20Vishay/SiliconixMOSFET N-CH 600V 2.2A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.2A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 2,66Additional information
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IRFZ40IRFZ40Vishay/SiliconixMOSFET N-CH 50V 35A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 28 mOhm @ 29A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 3000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 2,89Additional information
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IRF9Z20PBFIRF9Z20PBFVishay/SiliconixMOSFET P-CH 50V 9.7A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.7A  ·  Input Capacitance (Ciss) @ Vds: 480pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 0,77
from 1,97		Additional information
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IRFZ34ESTRLIRFZ34ESTRLVishay/SiliconixMOSFET N-CH 60V 28A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 42 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 680pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 68W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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