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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

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PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
APT10021JLLMicrosemi-PPGMOSFET N-CH 1000V 37A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 210 mOhm @ 18.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 395nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 37A  ·  Input Capacitance (Ciss) @ Vds: 9750pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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IXFN44N100PIXYSMOSFET N-CH 1000V 37A SOT-227B
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 22A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 37A  ·  Input Capacitance (Ciss) @ Vds: 19000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 890W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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APT37M100B2APT37M100B2Microsemi-PPGMOSFET N-CH 1000V 37A T-MAX
Rds On (Max) @ Id, Vgs: 330 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 37A  ·  Input Capacitance (Ciss) @ Vds: 9835pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1135W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT37M100LAPT37M100LMicrosemi-PPGMOSFET N-CH 1000V 37A TO-264
Rds On (Max) @ Id, Vgs: 330 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 37A  ·  Input Capacitance (Ciss) @ Vds: 9835pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1135W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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IXFB38N100Q2IXYSMOSFET N-CH 1000V 38A PLUS264
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 250nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 7200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 890W  ·  Mounting Type: Through Hole  ·  Package / Case: 3-PLUS264™
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IXFN38N100Q2IXYSMOSFET N-CH 1000V 38A SOT-227
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 250nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 7200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 890W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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IXFN38N100PIXYSMOSFET N-CH 1000V 38A SOT-227B
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 210 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 350nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 24000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1000W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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APT10026L2FLLGMicrosemi-PPGMOSFET N-CH 1000V 38A TO-264MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 19A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 267nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 7114pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 893W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT10026L2LLGMicrosemi-PPGMOSFET N-CH 1000V 38A TO-264MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 19A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 267nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 7114pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 893W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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IXTA3N100D2IXYSMOSFET N-CH 1000V 3A D2PAK
Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 1.5A, 0V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 37.5nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 1020pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Depletion Mode  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IXTP3N100PIXTP3N100PIXYSMOSFET N-CH 1000V 3A TO-220
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IXTP3N100D2IXYSMOSFET N-CH 1000V 3A TO220AB
Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 1.5A, 0V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 37.5nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 1020pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Depletion Mode  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IXTH3N100PIXYSMOSFET N-CH 1000V 3A TO-247
Серия: PolarVHV™  ·  Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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IXTA3N100PIXYSMOSFET N-CH 1000V 3A TO-263
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFPG40IRFPG40Vishay/SiliconixMOSFET N-CH 1000V 4.3A TO-247AC
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 2.6A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 120nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.3A  ·  Input Capacitance (Ciss) @ Vds: 1600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFPG40PBFIRFPG40PBFVishay/SiliconixMOSFET N-CH 1000V 4.3A TO-247AC
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 2.6A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 120nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.3A  ·  Input Capacitance (Ciss) @ Vds: 1600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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APTM100DA18T1GMicrosemi-PPGMOSFET N-CH 1000V 40A SP1
Rds On (Max) @ Id, Vgs: 216 mOhm @ 33A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 570nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 14800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 657W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP1 Module
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APT41F100JAPT41F100JMicrosemi-PPGMOSFET N-CH 1000V 41A SOT-227
Rds On (Max) @ Id, Vgs: 210 mOhm @ 33A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 570nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 41A  ·  Input Capacitance (Ciss) @ Vds: 18500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 960W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APTM100DA18TGMicrosemi-PPGMOSFET N-CH 1000V 43A SP4
Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 372nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 43A  ·  Input Capacitance (Ciss) @ Vds: 10400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 780W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP4 Module
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APTM100SK18TGMicrosemi-PPGMOSFET N-CH 1000V 43A SP4
Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 372nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 43A  ·  Input Capacitance (Ciss) @ Vds: 10400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 780W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP4 Module
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IXFB44N100PIXYSMOSFET N-CH 1000V 44A PLUS264
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 44A  ·  Input Capacitance (Ciss) @ Vds: 19000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1250W  ·  Mounting Type: Through Hole  ·  Package / Case: 3-PLUS264™
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APT45M100JAPT45M100JMicrosemi-PPGMOSFET N-CH 1000V 45A SOT-227
Rds On (Max) @ Id, Vgs: 180 mOhm @ 33A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 570nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 18500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 960W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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IXFA4N100PIXYSMOSFET N-CH 1000V 4A D2PAK
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 26nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4A  ·  Input Capacitance (Ciss) @ Vds: 1456pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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APT1003RSFLLGMicrosemi-PPGMOSFET N-CH 1000V 4A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4A  ·  Input Capacitance (Ciss) @ Vds: 694pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 139W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT1003RSLLGMicrosemi-PPGMOSFET N-CH 1000V 4A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4A  ·  Input Capacitance (Ciss) @ Vds: 694pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 139W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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