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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

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PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
2N7000,1262N7000,126NXP SemiconductorsMOSFET N-CH 60V 300MA TO-92
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 300mA  ·  Input Capacitance (Ciss) @ Vds: 40pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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HUFA75652G3HUFA75652G3Fairchild SemiconductorMOSFET N-CH 100V 75A TO-247
Серия: UltraFET™  ·  Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 475nC @ 20V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 7585pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 515W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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BUK7505-30A,127BUK7505-30A,127NXP SemiconductorsMOSFET N-CH 30V 75A SOT78
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 230W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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2SK3568ToshibaMOSFET N-CH 500V 12A TO-220SIS
Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 42nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220 (SIS)
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IPS04N03LA GInfineon TechnologiesMOSFET N-CH 25V 50A IPAK
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 5199pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 115W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
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IRL1004LIRL1004LInternational RectifierMOSFET N-CH 40V 130A TO-262
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 130A  ·  Input Capacitance (Ciss) @ Vds: 5330pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-262-3 (Straight Leads)
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MIC94050BM4 TRMIC94050BM4 TRMicrel IncMOSFET P-CH 6V 1.8A SOT-143
Серия: SymFET™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V  ·  Drain to Source Voltage (Vdss): 6V  ·  Current - Continuous Drain (Id) @ 25° C: 1.8A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 5.5V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 568mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-143, SOT-143B, TO-253AA
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NTJS4405NT1NTJS4405NT1ON SemiconductorMOSFET N-CH 25V 1A SOT-363
Rds On (Max) @ Id, Vgs: 350 mOhm @ 600mA, 4.5V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 1.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 1A  ·  Input Capacitance (Ciss) @ Vds: 60pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 630mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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IRF710LVishay/SiliconixMOSFET N-CH 400V 2A TO-262
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 170pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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FQA9N90CFairchild SemiconductorMOSFET N-CH 900V 9A TO-3P
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 58nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 2730pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P-3 (Straight Leads)
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PHX45NQ11T,127PHX45NQ11T,127NXP SemiconductorsMOSFET N-CH 110V 30.4A SOT186A
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 110V  ·  Gate Charge (Qg) @ Vgs: 61nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30.4A  ·  Input Capacitance (Ciss) @ Vds: 2600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 62.5W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack
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IRFS33N15DIRFS33N15DInternational RectifierMOSFET N-CH 150V 33A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 90nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 2020pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRL3705ZIRL3705ZInternational RectifierMOSFET N-CH 55V 75A TO-220AB
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 8 mOhm @ 52A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 2880pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 130W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STB20NM60-1STB20NM60-1STMicroelectronicsMOSFET N-CH 600V 20A I2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 54nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 192W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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STB100NH02LT4STB100NH02LT4STMicroelectronicsMOSFET N-CH 24V 60A D2PAK
Серия: STripFET™  ·  Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 24V  ·  Gate Charge (Qg) @ Vgs: 64nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 2850pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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PHM21NQ15T,518NXP SemiconductorsMOSFET N-CH 150V 22.2A SOT685-1
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 55 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 36.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22.2A  ·  Input Capacitance (Ciss) @ Vds: 2080pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 62.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-HVSON
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NTP60N06GNTP60N06GON SemiconductorMOSFET N-CH 60V 60A TO220AB
Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 81nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 3220pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.4W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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RFP30P05RFP30P05Fairchild SemiconductorMOSFET P-CH 50V 30A TO-220AB
Rds On (Max) @ Id, Vgs: 65 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 170nC @ 20V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 3200pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 120W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRL510STRRIRL510STRRVishay/SiliconixMOSFET N-CH 100V 5.6A D2PAK
Rds On (Max) @ Id, Vgs: 540 mOhm @ 3.4A, 5V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 6.1nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.6A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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HRFZ44NHRFZ44NFairchild SemiconductorMOSFET N-CH 55V 49A TO-220AB
Серия: UltraFET™  ·  Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 75nC @ 20V  ·  Current - Continuous Drain (Id) @ 25° C: 49A  ·  Input Capacitance (Ciss) @ Vds: 1060pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 120W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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NDP7060LNDP7060LFairchild SemiconductorMOSFET N-CH 60V 75A TO-220
Rds On (Max) @ Id, Vgs: 15 mOhm @ 37.5A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 115nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 4000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRFBG30STRLIRFBG30STRLVishay/SiliconixMOSFET N-CH 1000V 3.1A D2PAK
Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.1A  ·  Input Capacitance (Ciss) @ Vds: 980pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BSS123 E7874Infineon TechnologiesMOSFET N-CH 100V 170MA SOT-23
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 2.67nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 170mA  ·  Input Capacitance (Ciss) @ Vds: 69pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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FQA7N80Fairchild SemiconductorMOSFET N-CH 800V 7.2A TO-3P
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 3.6A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 52nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.2A  ·  Input Capacitance (Ciss) @ Vds: 1850pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 198W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P-3 (Straight Leads)
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IRFU4105ZIRFU4105ZInternational RectifierMOSFET N-CH 55V 30A I-PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 740pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 48W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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