Manufacturer: NXP Semiconductors  •  RoHS/pb-free: RoHS   Pb-free  •  Series: TrenchMOS™  •  Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  •  Drain to Source Voltage (Vdss): 60V  •  Current - Continuous Drain (Id) @ 25° C: 300mA  •  Input Capacitance (Ciss) @ Vds: 40pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 830mW  •  Mounting Type: Through Hole  •  Package / Case: TO-92-3 (Standard Body), TO-226  •  Other PartNo: 2N7000 AMO, 2N7000 AMO-ND