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QS5U17TR

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QS5U17TR — MOSFET N-CH 30V 2A TSMT5

ManufacturerRohm Semiconductor
Harmful substancesRoHS   Lead-free
Rds On (Max) @ Id, Vgs100 mOhm @ 2A, 4.5V
Drain to Source Voltage (Vdss)30V
Gate Charge (Qg) @ Vgs3.9nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C2A
Input Capacitance (Ciss) @ Vds175pF @ 10V
FET PolarityN-Channel
FET FeatureDiode (Isolated)
Power - Max900mW
Mounting TypeSurface Mount
Package / CaseTSMT5
Found under nameQS5U17DKR
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
RZQ050P01TRRZQ050P01TRRohm SemiconductorMOSFET P-CH 12V 5A TSMT6
Rds On (Max) @ Id, Vgs: 26 mOhm @ 5A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 2850pF @ 6V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: TSMT6
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QS6U24TRQS6U24TRRohm SemiconductorMOSFET P-CH 30V 1A TSMT6
Rds On (Max) @ Id, Vgs: 400 mOhm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 1.7nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1A  ·  Input Capacitance (Ciss) @ Vds: 90pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 900mW  ·  Mounting Type: Surface Mount  ·  Package / Case: TSMT6
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RSR020P03TLRSR020P03TLRohm SemiconductorMOSFET P-CH 30V 2A TSMT3
Rds On (Max) @ Id, Vgs: 120 mOhm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 4.3nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 370pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: TSMT3
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RZE002P02TLRohm SemiconductorMOSFET P-CH 20V 200MA EMT3
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 1.4nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 115pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150mW  ·  Mounting Type: Surface Mount  ·  Package / Case: EMT3 (SOT-416, SC-75-3)
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US5U2TRUS5U2TRRohm SemiconductorMOSFET N-CH 30V 1.4A TUMT5
Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 2nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.4A  ·  Input Capacitance (Ciss) @ Vds: 70pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: TUMT5
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2SK3050TL2SK3050TLRohm SemiconductorMOSFET N-CH 600V 2A DPAK
Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 25.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 280pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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RHP020N06T100RHP020N06T100Rohm SemiconductorMOSFET N-CH 60V 2A SOT-89
Rds On (Max) @ Id, Vgs: 200 mOhm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 140pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-62, SOT-89, MPT3 (3 leads + Tab)
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RTL020P02TRRTL020P02TRRohm SemiconductorMOSFET P-CH 20V 2A TUMT6
Rds On (Max) @ Id, Vgs: 135 mOhm @ 2A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 4.9nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 430pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: TUMT6
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RTQ045N03TRRTQ045N03TRRohm SemiconductorMOSFET N-CH 30V 4.5A TSMT6
Rds On (Max) @ Id, Vgs: 43 mOhm @ 4.5A, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 10.7nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 4.5A  ·  Input Capacitance (Ciss) @ Vds: 540pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: TSMT6
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RDN050N20RDN050N20Rohm SemiconductorMOSFET N-CH 200V 5A TO-220FN
Rds On (Max) @ Id, Vgs: 720 mOhm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 18.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 292pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FN-3 (Straight Leads)
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RSS050P03TBRSS050P03TBRohm SemiconductorMOSFET P-CH 30V 5A 8-SOIC
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.5A  ·  Input Capacitance (Ciss) @ Vds: 2900pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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Rds On (Max) @ Id, Vgs: 125 mOhm @ 2A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 4.8nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 450pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 900mW  ·  Mounting Type: Surface Mount  ·  Package / Case: TSMT5
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Rds On (Max) @ Id, Vgs: 62 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 7.4nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.5A  ·  Input Capacitance (Ciss) @ Vds: 290pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: TSMT6
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2SK27402SK2740Rohm SemiconductorMOSFET N-CH 600V 7A TO-220FN
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 1050pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FN-3 (Straight Leads)
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RTQ020N03TRRTQ020N03TRRohm SemiconductorMOSFET N-CH 30V 2A TSMT6
Rds On (Max) @ Id, Vgs: 125 mOhm @ 2A, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 3.3nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 135pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: TSMT6
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RTR030P02TLRTR030P02TLRohm SemiconductorMOSFET P-CH 20V 3A TSMT3
Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 9.3nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 840pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: TSMT3
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RTR020P02TLRTR020P02TLRohm SemiconductorMOSFET P-CH 20V 2A TSMT3
Rds On (Max) @ Id, Vgs: 135 mOhm @ 2A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 4.9nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 430pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: TSMT3
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2SK27932SK2793Rohm SemiconductorMOSFET N-CH 500V 5A TO-220FN
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FN-3 (Straight Leads)
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RSR025P03TLRSR025P03TLRohm SemiconductorMOSFET P-CH 30V 2.5A TSMT3
Rds On (Max) @ Id, Vgs: 98 mOhm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 5.4nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.5A  ·  Input Capacitance (Ciss) @ Vds: 460pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: TSMT3
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RJU002N06T106RJU002N06T106Rohm SemiconductorMOSFET N-CH 60V 200MA SOT-323
Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 200mA, 4.5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 18pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 200mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
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RSE002P03TLRSE002P03TLRohm SemiconductorMOSFET P-CH 30V 200MA SOT416
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 200mA, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 30pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
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RVQ040N05TRRVQ040N05TRRohm SemiconductorMOSFET N-CH 45V 4A TSMT6
Rds On (Max) @ Id, Vgs: 53 mOhm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 45V  ·  Gate Charge (Qg) @ Vgs: 8.8nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 4A  ·  Input Capacitance (Ciss) @ Vds: 530pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: TSMT6
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QS5U34TRQS5U34TRRohm SemiconductorMOSFET N-CH 20V 1.5A TSMT5
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 2.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.5A  ·  Input Capacitance (Ciss) @ Vds: 110pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 900mW  ·  Mounting Type: Surface Mount  ·  Package / Case: TSMT5
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RSQ030P03TRRSQ030P03TRRohm SemiconductorMOSFET P-CH 30V 3A TSMT6
Rds On (Max) @ Id, Vgs: 80 mOhm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 440pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: TSMT6
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