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QS6U24TR

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QS6U24TR — MOSFET P-CH 30V 1A TSMT6

ManufacturerRohm Semiconductor
Harmful substancesRoHS   Lead-free
Rds On (Max) @ Id, Vgs400 mOhm @ 1A, 10V
Drain to Source Voltage (Vdss)30V
Gate Charge (Qg) @ Vgs1.7nC @ 5V
Current - Continuous Drain (Id) @ 25° C1A
Input Capacitance (Ciss) @ Vds90pF @ 10V
FET PolarityP-Channel
FET FeatureDiode (Isolated)
Power - Max900mW
Mounting TypeSurface Mount
Package / CaseTSMT6
Found under nameQS6U24DKR
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Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 300mA  ·  Input Capacitance (Ciss) @ Vds: 33pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 200mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-59-3, SMT3, SOT-346, TO-236
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Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 2.2nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.5A  ·  Input Capacitance (Ciss) @ Vds: 80pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: TUMT5
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Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 62nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1224pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FN-3 (Straight Leads)
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Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 300mA  ·  Input Capacitance (Ciss) @ Vds: 33pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 200mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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