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QS5U34TR

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QS5U34TR — MOSFET N-CH 20V 1.5A TSMT5

ManufacturerRohm Semiconductor
Harmful substancesRoHS   Lead-free
Rds On (Max) @ Id, Vgs180 mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss)20V
Gate Charge (Qg) @ Vgs2.5nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C1.5A
Input Capacitance (Ciss) @ Vds110pF @ 10V
FET PolarityN-Channel
FET FeatureDiode (Isolated)
Power - Max900mW
Mounting TypeSurface Mount
Package / CaseTSMT5
Found under nameQS5U34CT
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Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FN-3 (Straight Leads)
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QS5U23TRQS5U23TRRohm SemiconductorMOSFET P-CH 20V 1.5A TSMT5
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 4.2nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.5A  ·  Input Capacitance (Ciss) @ Vds: 325pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 900mW  ·  Mounting Type: Surface Mount  ·  Package / Case: TSMT5
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Rds On (Max) @ Id, Vgs: 135 mOhm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 3.4nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 310pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 900mW  ·  Mounting Type: Surface Mount  ·  Package / Case: TSMT5
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Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 2.1nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 1A  ·  Input Capacitance (Ciss) @ Vds: 150pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: TUMT5
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