Manufacturer: NXP Semiconductors  •  RoHS/pb-free: RoHS   Pb-free  •  Series: TrenchMOS™  •  Rds On (Max) @ Id, Vgs: 120 mOhm @ 12A, 10V  •  Drain to Source Voltage (Vdss): 200V  •  Gate Charge (Qg) @ Vgs: 30.8nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 21.1A  •  Input Capacitance (Ciss) @ Vds: 1380pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 150W  •  Mounting Type: Surface Mount  •  Package / Case: DPak, TO-252 (2 leads+tab), SC-63  •  Other PartNo: PHD22NQ20T /T3, PHD22NQ20T /T3-ND