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FQU2N80TU
— MOSFET N-CH 800V 1.8A IPAK
Discrete Semiconductor Products
»
MOSFETs - Single
Manufacturer: Fairchild Semiconductor
•
RoHS/pb-free:
RoHS
Pb-free
•
Please note:
Lead Dimension Change 23 jan 2007
•
Series: QFET™
•
Rds On (Max) @ Id, Vgs: 6.3 Ohm @ 900mA, 10V
•
Drain to Source Voltage (Vdss): 800V
•
Gate Charge (Qg) @ Vgs: 15nC @ 10V
•
Current - Continuous Drain (Id) @ 25° C: 1.8A
•
Input Capacitance (Ciss) @ Vds: 550pF @ 25V
•
FET Polarity: N-Channel
•
FET Feature: Standard
•
Power - Max: 2.5W
•
Mounting Type: Through Hole
•
Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
Datasheet
FQD2N80.pdf
on site fairchildsemi.com
ipakpdd_tr.pdf
on site fairchildsemi.com
Part Numbers
FQU2N80TU
FQU2N80TU /ONS/ moq>563
FQU2N80TU-PBFREE
Manufacturers
FAIRCHILD
Fairchild Semiconductor
onsemi
ON Semiconductor
Rochester
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FQU2N80TU
MOSFET N-CH 800V 1.8A IPAK
ON Semiconductor
FQU2N80TU
N-CHANNEL POWER MOSFET
Rochester Electronics, LLC
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