Features | Manufacturer: Diodes Inc • Voltage - Collector Emitter Breakdown (Max): 50V • Resistor - Base (R1) (Ohms): 10K • Resistor - Emitter Base (R2) (Ohms): 4.7K • DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA • Current - Collector (Ic) (Max): 100mA • Frequency - Transition: 250MHz • Power - Max: 200mW • Transistor Type: NPN - Pre-Biased • Mounting Type: Surface Mount • Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 • Other PartNo: DDTC114WCADITR |