Manufacturer: Infineon Technologies  •  Series: SIPMOS®  •  Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10v  •  Drain to Source Voltage (Vdss): 200V  •  Gate Charge (Qg) @ Vgs: 14nC @ 5V  •  Current - Continuous Drain (Id) @ 25° C: 660mA  •  Input Capacitance (Ciss) @ Vds: 430pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Depletion Mode  •  Power - Max: 1.8W  •  Mounting Type: Surface Mount  •  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA  •  Other PartNo: BSP149E6327T, SP000011104