Manufacturer: Infineon Technologies  •  RoHS/pb-free: RoHS   Pb-free  •  Voltage - Collector Emitter Breakdown (Max): 50V  •  Resistor - Base (R1) (Ohms): 4.7K  •  Resistor - Emitter Base (R2) (Ohms): 4.7K  •  DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V  •  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  •  Current - Collector (Ic) (Max): 100mA  •  Frequency - Transition: 140MHz  •  Power - Max: 250mW  •  Transistor Type: NPN - Pre-Biased  •  Mounting Type: Surface Mount  •  Package / Case: SOT-323  •  Other PartNo: BCR112WE6327, BCR112WE6327XT, SP000010748