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BCR 112F E6327 — TRANSISTOR NPN DGTL AF TSFP-3

Manufacturer: Infineon Technologies  •  RoHS/pb-free: RoHS   Pb-free  •  Voltage - Collector Emitter Breakdown (Max): 50V  •  Resistor - Base (R1) (Ohms): 4.7K  •  Resistor - Emitter Base (R2) (Ohms): 4.7K  •  DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V  •  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  •  Current - Collector (Ic) (Max): 100mA  •  Frequency - Transition: 140MHz  •  Power - Max: 250mW  •  Transistor Type: NPN - Pre-Biased  •  Mounting Type: Surface Mount  •  Package / Case: TSFP-3  •  Other PartNo: BCR112FE6327XT, SP000014062
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Suppliers of «BCR 112F E6327»

SupplierPart NoManufacturerPriceStock
AN-CHIPFresh data!BCR 112F E6327
транзистор TRANSISTOR NPN DGTL AF TSFP-3 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21
Infineon Technologies 34776
ООО "Интегральные схемы"BCR 112F E6327 from 7 days
AspectBCR 112F E6327 from 7 days


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