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APTM100DA33T1G — MOSFET N-CH 1000V 23A SP1

Manufacturer: Microsemi-PPG  •  RoHS/pb-free: RoHS   Pb-free  •  Rds On (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V  •  Drain to Source Voltage (Vdss): 1000V (1kV)  •  Gate Charge (Qg) @ Vgs: 305nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 23A  •  Input Capacitance (Ciss) @ Vds: 7868pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 390W  •  Mounting Type: Chassis Mount  •  Package / Case: SP1 Module
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Suppliers of «APTM100DA33T1G»

SupplierPart NoManufacturerPriceStock
AspectAPTM100DA33T1G from 7 days
ООО "Интегральные схемы"APTM100DA33T1G from 7 days
"SINERGY-DISTRIBUTION" LLCAPTM100DA33T1G
MOSFET N-CH 1000V 23A SP1
Microsemi Corporation
KontestAPTM100DA33T1G
MOSFET N-CH 1000V 23A SP1 Подробнее
Microsemi Power Products Group


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Acme Chip Technology Co.,Limited0  0 Hide
Digi-ic_SMART PIONEER Electronic0  0 Hide
Geefook (shenzhen) Electronic Co., Ltd0  0 Hide
Icseek Global Limited0  0 Hide
KontestMoscow+7 (495) 150-88-73, Fax: (495) 150-88-736  27 Hide
Voronez+7 (473) 239-22-32
AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
"SINERGY-DISTRIBUTION" LLCSt. Petersburg+7 (812) 409-49-130  1 Hide
Moscow+7 (499) 322-80-72
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