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TPCA8016-H(TE12LQM

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TPCA8016-H(TE12LQM — MOSFET N-CH 60V 25A 8-SOPA

ManufacturerToshiba
Harmful substancesRoHS   Lead-free
Rds On (Max) @ Id, Vgs21 mOhm @ 13A, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs22nC @ 10V
Current - Continuous Drain (Id) @ 25° C25A
Input Capacitance (Ciss) @ Vds1375pF @ 10V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max45W
Mounting TypeSurface Mount
Package / Case8-SOPA
Found under nameTPCA8016-H(TE12L,Q, TPCA8016HTE12LQMTR, TPCA8016HTE12LQTR, TPCA8016HTE12LQTR-ND
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
2SK2961(F,M)2SK2961(F,M)ToshibaMOSFET N-CH 60V 2A TO-92
Rds On (Max) @ Id, Vgs: 270 mOhm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 5.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 170pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 900mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Long Body), TO-226
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2SK1382(Q)ToshibaMOSFET N-CH 100V 60A TO-3PL
Rds On (Max) @ Id, Vgs: 20 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 176nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 7000pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 200W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P(L) (2-21F1B)
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2SK3565ToshibaMOSFET N-CH 900V 5A TO-220SIS
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 1150pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220 (SIS)
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TK15A60U(Q)TK15A60U(Q)ToshibaMOSFET N-CH 600V 15A TO-220SIS
Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 950pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220 (SIS)
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2SK2916ToshibaMOSFET N-CH 500V 14A 2-16F1B
Rds On (Max) @ Id, Vgs: 400 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 58nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 2600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 80W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16F1B
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2SK2968(F,T)2SK2968(F,T)ToshibaMOSFET N-CH 900V 10A 2-16C1B
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 2150pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK3763(Q,M)ToshibaMOSFET N-CH 900V 3A TO-220AB
Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 69W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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2SK3758(M)ToshibaMOSFET N-CH 500V 5A TO-220AB
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 58W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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TPC6005(TE85L,F,M)ToshibaMOSFET N-CH 30V 6A VS6 2-3T1A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 1420pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-3T1A
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2SJ681(Q)ToshibaMOSFET P-CH 60V 5A PW-MOLD
Rds On (Max) @ Id, Vgs: 170 mOhm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 20W  ·  Mounting Type: Through Hole
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2SK2700(T)ToshibaMOSFET N-CH 900V 3A 2-10R1B
Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 750pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10R1B
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2SK2201(TE16R)ToshibaMOSFET N-CH 100V 3A 2-7B2B
Rds On (Max) @ Id, Vgs: 350 mOhm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 13.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 280pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-7J1B
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2SK3265(F,T)ToshibaMOSFET N-CH 700V 10A SC-67
Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 700V  ·  Gate Charge (Qg) @ Vgs: 53nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10R1B
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2SK3387(TE24L,Q)ToshibaMOSFET N-CH 150V 18A SC-97
Rds On (Max) @ Id, Vgs: 120 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 57nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 1380pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount
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2SK3763(M)ToshibaMOSFET N-CH 900V 3A TO-220AB
Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 69W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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2SJ464(F)ToshibaMOSFET P-CH 100V 18A TO-220NIS
Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 140nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 2900pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10R1B
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TPCF8102(TE85L,F,MToshibaMOSFET P-CH 20V 6A VS8 2-3U1A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 1550pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: VS-8 (2-3U1A)
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2SK3563(Q)2SK3563(Q)ToshibaMOSFET N-CH 500V 5A TO-220SIS
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220 (SIS)
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TPC6007-H(TE85LFM)ToshibaMOSFET N-CH 30V 5A VS-6
Rds On (Max) @ Id, Vgs: 54 mOhm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 4.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 240pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-3T1A
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2SK2312(F)ToshibaMOSFET N-CH 60V 45A 2-10R1B
Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 3350pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10R1B
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2SK2837ToshibaMOSFET N-CH 500V 20A 2-16C1B
Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 3720pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK3798(Q)ToshibaMOSFET N-CH 900V 4A SC-67
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4A  ·  Input Capacitance (Ciss) @ Vds: 800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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2SK2603(F)ToshibaMOSFET N-CH 800V 3A TO-220AB
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 750pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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2SK4016(Q)ToshibaMOSFET N-CH 600V 13A SC-67
Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 62nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 3100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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TPC6102(TE12L)ToshibaMOSFET P-CH 30V 4.5A VS-6
Rds On (Max) @ Id, Vgs: 60 mOhm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.5A  ·  Input Capacitance (Ciss) @ Vds: 500pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: VS-6 (SOT-23-6)
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