Manufacturer: Toshiba  •  RoHS/pb-free: RoHS   Pb-free  •  Rds On (Max) @ Id, Vgs: 270 mOhm @ 1A, 10V  •  Drain to Source Voltage (Vdss): 60V  •  Gate Charge (Qg) @ Vgs: 5.8nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 2A  •  Input Capacitance (Ciss) @ Vds: 170pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 900mW  •  Mounting Type: Through Hole  •  Package / Case: TO-92-3 (Long Body), TO-226