Additional info
0
0
0
Suppliers
Catalog
Datasheets
Cross-reference
Message Board
more
Log in
Register
more
Industry News
Contact info
Exact search
Only in-stock
Only with prices
Classic interface
Help and FAQ
Features
2SK3798(Q)
— MOSFET N-CH 900V 4A SC-67
Discrete Semiconductor Products
»
MOSFETs - Single
Manufacturer: Toshiba
•
RoHS/pb-free:
RoHS
Pb-free
•
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 2A, 10V
•
Drain to Source Voltage (Vdss): 900V
•
Gate Charge (Qg) @ Vgs: 26nC @ 10V
•
Current - Continuous Drain (Id) @ 25° C: 4A
•
Input Capacitance (Ciss) @ Vds: 800pF @ 25V
•
FET Polarity: N-Channel
•
FET Feature: Standard
•
Power - Max: 40W
•
Mounting Type: Through Hole
•
Package / Case: 2-10U1B
Datasheet
BCE0017_catalog.pdf
on site co.jp
Part Numbers
2SK3798(Q)
2SK3798(Q M)
Print this results
Страница с результатами, оптимизированная для печати.
Quick bulk request!
Send your request immediately 500 suppliers! Find the best price!
Suppliers of «2SK3798(Q)»
All
Russian
World
Supplier
Part No
Manufacturer
Price
Stock
AN-CHIP
2SK3798(Q,M)
микросхема интегральная электронная MOSFET N-CH 900V 4A TO220SIS 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21
Toshiba
29544
Kontest
2SK3798(Q,M)
Подробнее
TOSHIBA
154, 3-4 weeks
2SK3798(Q)
MOSFET N-CH 900V 4A SC-67
Подробнее
Toshiba
Company Information
Company
Office
Phone
E-mail
Feedback
Kontest
Moscow
+7 (495) 150-88-73, Fax: (495) 150-88-73
6
27
Hide
Voronez
+7 (473) 239-22-32
AN-CHIP
St. Petersburg
+7 (812) 922-25-39
0
0
Hide
«2SK3798(Q)» in
Google
,
Yahoo
,
FindChips
,
Datasheet Archive
Distributors: 2163 Russian and 774 worldwide
Icons Legend
Interface Settings
Hidden suppliers
Advertising
Upload your inventory
Contact info
Print