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IPU04N03LA — MOSFET N-CH 25V 50A IPAK

ManufacturerInfineon Technologies
SeriesOptiMOS™
Rds On (Max) @ Id, Vgs4 mOhm @ 50A, 10V
Drain to Source Voltage (Vdss)25V
Gate Charge (Qg) @ Vgs41nC @ 5V
Current - Continuous Drain (Id) @ 25° C50A
Input Capacitance (Ciss) @ Vds5199pF @ 15V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max115W
Mounting TypeThrough Hole
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
Found under nameSP000014621
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
IPI06CN10N GInfineon TechnologiesMOSFET N-CH 100V 100A TO262-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 100A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 139nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 9200pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 214W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 1,92Additional information
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BSC090N03LSGBSC090N03LSGInfineon TechnologiesMOSFET N-CH 30V 48A TDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 48A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 32W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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SPD50N06S2L-13Infineon TechnologiesMOSFET N-CH 55V 50A DPAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 12.7 mOhm @ 34A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 69nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 2300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 136W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IPBH6N03LA GIPBH6N03LA GInfineon TechnologiesMOSFET N-CH 25V 50A TO-263
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 2390pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 71W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IPP03N03LAIPP03N03LAInfineon TechnologiesMOSFET N-CH 25V 80A TO-220AB
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3 mOhm @ 55A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 57nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 7027pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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IPD09N03LA GIPD09N03LA GInfineon TechnologiesMOSFET N-CH 25V 50A DPAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 1642pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 63W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BSO201SPTInfineon TechnologiesMOSFET P-CH 20V 14.9A 8-SOIC
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 8 mOhm @ 14.9A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 128nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 14.9A  ·  Input Capacitance (Ciss) @ Vds: 5962pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC
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IPD250N06N3 GInfineon TechnologiesMOSFET N-CH 60V 28A TO252-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 25 mOhm @ 28A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 36W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IPP100N10S3-05Infineon TechnologiesMOSFET N-CH 100V 100A T0220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 176nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 11570pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3
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IPP45N06S3-16IPP45N06S3-16Infineon TechnologiesMOSFET N-CH 55V 45A TO-220
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 15.7 mOhm @ 23A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 57nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 2980pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 65W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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BSS214NW L6327Infineon TechnologiesMOSFET N-CH 20V 1.5A SOT-323
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 0.8nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.5A  ·  Input Capacitance (Ciss) @ Vds: 143pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-323
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IPP034N03L GIPP034N03L GInfineon TechnologiesMOSFET N-CH 30V 80A TO-220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 51nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 5300pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 94W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3
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IPU78CN10N GInfineon TechnologiesMOSFET N-CH 100V 13A TO251-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 78 mOhm @ 13A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 716pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 31W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IPP057N06N3 GInfineon TechnologiesMOSFET N-CH 60V 80A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 82nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 6600pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 115W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPP80N06S2-05Infineon TechnologiesMOSFET N-CH 55V 80A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 170nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 5110pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPB049N06L3 GInfineon TechnologiesMOSFET N-CH 60V 80A TO263-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 8400pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 115W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BSL207SP L6327BSL207SP L6327Infineon TechnologiesMOSFET P-CH 20V 6A 6-TSOP
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 41 mOhm @ 6A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 1007pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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IPD088N04L GInfineon TechnologiesMOSFET N-CH 40V 50A TO252-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 2100pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 47W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IPB80N04S2-H4Infineon TechnologiesMOSFET N-CH 40V 80A TO263-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 148nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 4400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IPI120N04S3-02Infineon TechnologiesMOSFET N-CH 40V 120A TO262-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 210nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 120A  ·  Input Capacitance (Ciss) @ Vds: 14300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IPD10N03LAInfineon TechnologiesMOSFET N-CH 25V 30A DPAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1358pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 52W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IPP26CNE8N GInfineon TechnologiesMOSFET N-CH 85V 35A TO-220
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 26 mOhm @ 35A, 10V  ·  Drain to Source Voltage (Vdss): 85V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 2070pF @ 40V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 71W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPP100N06S2L-05Infineon TechnologiesMOSFET N-CH 55V 100A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 230nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 5660pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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SPB80N06S2-08SPB80N06S2-08Infineon TechnologiesMOSFET N-CH 55V 80A D2PAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 8 mOhm @ 58A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 96nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 3800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 215W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IPB075N04L GInfineon TechnologiesMOSFET N-CH 40V 50A TO263-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 36nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 2800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 56W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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