Log in Register |
|
Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
SPD30N03S2L10T | Infineon Technologies | MOSFET N-CH 30V 30A DPAK Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 41.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1550pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Additional information Find at suppliers | ||
IPB50CN10N G | Infineon Technologies | MOSFET N-CH 100V 20A TO263-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 50 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1090pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 44W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | from 0,55 | Additional information Find at suppliers | |
IPI086N10N3 G | Infineon Technologies | MOSFET N-CH 100V 80A TO262-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 73A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3980pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | from 1,00 | Additional information Find at suppliers | |
IPI09N03LA | Infineon Technologies | MOSFET N-CH 25V 50A I2PAK Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 13nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1642pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 63W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | Additional information Find at suppliers | ||
IPDH4N03LAG | Infineon Technologies | MOSFET N-CH 25V 90A TO252-3-11 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 60A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 26nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 3200pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 94W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | from 0,70 from 0,73 | Additional information Find at suppliers | |
IPSH6N03LB G | Infineon Technologies | MOSFET N-CH 30V 50A IPAK Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 22nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2800pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab) | Additional information Find at suppliers | ||
IPF10N03LA G | Infineon Technologies | MOSFET N-CH 25V 30A DPAK Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 11nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1358pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 52W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Additional information Find at suppliers | ||
IPD05N03LB G | Infineon Technologies | MOSFET N-CH 30V 90A DPAK Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 60A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 3200pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 94W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Additional information Find at suppliers | ||
IPD10N03LA G | Infineon Technologies | MOSFET N-CH 25V 30A DPAK Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 11nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1358pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 52W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Additional information Find at suppliers | ||
IPP015N04N G | Infineon Technologies | MOSFET N-CH 40V 120A TO220-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 250nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 120A · Input Capacitance (Ciss) @ Vds: 20000pF @ 20V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: TO-220 | from 1,66 | Additional information Find at suppliers | |
SPP80N08S2L-07 | Infineon Technologies | MOSFET N-CH 75V 80A TO-220 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 67A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 233nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 6820pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220 | Additional information Find at suppliers | ||
SPB80N03S2L05T | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 55A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 89.7nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3320pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 167W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Additional information Find at suppliers | ||
BSC252N10NSF G | Infineon Technologies | MOSFET N-CH 100V 40A TDSON-8 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 25.2 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 1100pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 78W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | from 0,57 | Additional information Find at suppliers | |
IPD15N06S2L-64 | Infineon Technologies | MOSFET N-CH 55V 19A TO252-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 64 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 354pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 47W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | from 0,25 | Additional information Find at suppliers | |
IPB100N04S3-03 | Infineon Technologies | MOSFET N-CH 40V 100A TO263-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 145nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 9600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 214W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | from 1,02 | Additional information Find at suppliers | |
IPB160N04S2-03 | Infineon Technologies | MOSFET N-CH 40V 160A TO263-7 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 60A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 160A · Input Capacitance (Ciss) @ Vds: 5300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (7 leads + tab) | from 1,90 | Additional information Find at suppliers | |
IPU05N03LA | Infineon Technologies | MOSFET N-CH 25V 50A IPAK Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 25nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3110pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 94W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | Additional information Find at suppliers | ||
SPD14N06S2-80 | Infineon Technologies | MOSFET N-CH 55V 17A DPAK Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 80 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 10nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Additional information Find at suppliers | ||
IPP100N08S2L-07 | Infineon Technologies | MOSFET N-CH 75V 100A TO220-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 246nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 5400pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220 | from 1,48 | Additional information Find at suppliers | |
IPP05CN10N G | Infineon Technologies | MOSFET N-CH 100V 100A TO-220 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 181nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 12000pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220 | from 1,93 from 4,28 | Additional information Find at suppliers | |
IPB80N06S3-07 | Infineon Technologies | MOSFET N-CH 55V 80A D2PAK Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 51A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 7768pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 135W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | from 0,77 | Additional information Find at suppliers | |
BSL211SP L6327 | Infineon Technologies | MOSFET P-CH 20V 4.7A TSOP-6 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 12.4nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 4.7A · Input Capacitance (Ciss) @ Vds: 654pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | from 0,26 from 0,69 | Additional information Find at suppliers | |
BSS670S2L L6327 | Infineon Technologies | MOSFET N-CH 55V 540MA SOT-23 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 650 mOhm @ 270mA, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 2.26nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 540mA · Input Capacitance (Ciss) @ Vds: 75pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,07 | Additional information Find at suppliers | |
IPD30N06S2L-23 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 23 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 42nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1091pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | from 0,38 | Additional information Find at suppliers | |
IPI139N08N3 G | Infineon Technologies | MOSFET N-CH 80V 45A TO262-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 45A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 1730pF @ 40V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 79W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | from 0,55 | Additional information Find at suppliers |
© 2006 — 2024 ChipFind Ltd. Contact phone, e-mail, ICQ |
Catalog with parameters for 1,401,534 components | Register • Advertising |