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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
IPB100N06S3L-04 | Infineon Technologies | MOSFET N-CH 55V 100A TO-263 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 362nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 17270pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 214W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | from 1,38 from 3,31 | Additional information Find at suppliers | |
IPP80N06S2L-07 | Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 130nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3160pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 210W · Mounting Type: Through Hole · Package / Case: TO-220 | from 0,92 | Additional information Find at suppliers | |
BSC119N03S G | Infineon Technologies | MOSFET N-CH 30V 30A TDSON-8 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 11.9 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 11nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1370pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 43W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | from 0,88 from 1,98 | Additional information Find at suppliers | |
IPB04N03LB | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 55A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 40nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5203pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 107W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Additional information Find at suppliers | ||
BSC067N06LS3 G | Infineon Technologies | MOSFET N-CH 60V 50A TDSON-8 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 5100pF @ 30V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 69W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | from 0,42 | Additional information Find at suppliers | |
IPB055N03L G | Infineon Technologies | MOSFET N-CH 30V 50A TO-263-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 31nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3200pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 68W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | from 0,96 from 1,42 | Additional information Find at suppliers | |
SPD30N08S2-22 | Infineon Technologies | MOSFET N-CH 75V 30A DPAK Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 57nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1950pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 136W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Additional information Find at suppliers | ||
BSC123N10LS G | Infineon Technologies | MOSFET N-CH 100V 71A TDSON-8 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 71A · Input Capacitance (Ciss) @ Vds: 4900pF @ 50V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 114W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | from 0,96 | Additional information Find at suppliers | |
IPI12CN10N G | Infineon Technologies | MOSFET N-CH 100V 67A TO262-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 65nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 67A · Input Capacitance (Ciss) @ Vds: 4320pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | from 1,10 | Additional information Find at suppliers | |
BSC022N03S | Infineon Technologies | MOSFET N-CH 30V 50A TDSON-8 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 58nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 7490pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 104W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | Additional information Find at suppliers | ||
IPP25N06S3L-22 | Infineon Technologies | MOSFET N-CH 55V 25A TO-220 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 21.6 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 47nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 2260pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: TO-220 | from 0,38 from 1,10 | Additional information Find at suppliers | |
IPD50N06S2-14 | Infineon Technologies | MOSFET N-CH 55V 50A TO252-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 32A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 52nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1485pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 136W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | from 0,56 | Additional information Find at suppliers | |
IPI070N06N G | Infineon Technologies | MOSFET N-CH 60V 80A TO262-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 118nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4100pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | from 1,16 | Additional information Find at suppliers | |
IPP072N10N3 G | Infineon Technologies | MOSFET N-CH 100V 80A TO220-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4910pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220 | from 1,05 | Additional information Find at suppliers | |
IPP77N06S2-12 | Infineon Technologies | MOSFET N-CH 55V 77A TO220-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12 mOhm @ 38A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 77A · Input Capacitance (Ciss) @ Vds: 1770pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 158W · Mounting Type: Through Hole · Package / Case: TO-220 | from 0,64 | Additional information Find at suppliers | |
IPB70N04S3-07 | Infineon Technologies | MOSFET N-CH 40V 80A TO263-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 70A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 2700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 79W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | from 0,48 | Additional information Find at suppliers | |
IPD80N06S3-09 | Infineon Technologies | MOSFET N-CH 55V 80A TO252-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 40A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 88nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 6100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 107W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | from 0,60 | Additional information Find at suppliers | |
BSO4410T | Infineon Technologies | MOSFET N-CH 30V 11.1A 8-SOIC Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 21nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 11.1A · Input Capacitance (Ciss) @ Vds: 1280pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC | from 0,38 from 0,41 | Additional information Find at suppliers | |
SPB80N08S2L-07 | Infineon Technologies | MOSFET N-CH 75V 80A D2PAK Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 67A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 233nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 6820pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Additional information Find at suppliers | ||
IPU07N03LA | Infineon Technologies | MOSFET N-CH 25V 30A TO-251 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 22nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 2653pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | from 0,89 from 1,33 | Additional information Find at suppliers | |
IPP12CNE8N G | Infineon Technologies | MOSFET N-CH 85V 67A TO-220 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V · Drain to Source Voltage (Vdss): 85V · Gate Charge (Qg) @ Vgs: 64nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 67A · Input Capacitance (Ciss) @ Vds: 4340pF @ 40V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220 | Additional information Find at suppliers | ||
IPB065N03L G | Infineon Technologies | MOSFET N-CH 30V 50A TO-263-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2400pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 56W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | from 0,89 from 1,32 | Additional information Find at suppliers | |
BSZ050N03MSG | Infineon Technologies | MOSFET N-CH 30V 40A TSDSON-8 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 46nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 3600pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 48W · Mounting Type: Surface Mount · Package / Case: 8-TSDSON | from 0,36 from 0,38 | Additional information Find at suppliers | |
IPS05N03LB G | Infineon Technologies | MOSFET N-CH 30V 90A IPAK Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5 mOhm @ 60A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 3200pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 94W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab) | Additional information Find at suppliers | ||
IPD068N10N3 G | Infineon Technologies | MOSFET N-CH 100V 90A TO252-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 90A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 4910pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | from 0,85 | Additional information Find at suppliers |
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