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BSC022N03S — MOSFET N-CH 30V 50A TDSON-8

ManufacturerInfineon Technologies
SeriesOptiMOS™
Rds On (Max) @ Id, Vgs2.2 mOhm @ 50A, 10V
Drain to Source Voltage (Vdss)30V
Gate Charge (Qg) @ Vgs58nC @ 5V
Current - Continuous Drain (Id) @ 25° C50A
Input Capacitance (Ciss) @ Vds7490pF @ 15V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max104W
Mounting TypeSurface Mount
Package / CaseTDSON-8
Found under nameBSC022N03ST, SP000014713
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
SPB80N03S2L-06 GSPB80N03S2L-06 GInfineon TechnologiesMOSFET N-CH 30V 80A D2PAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 68nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 2530pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IPP80N06S2L-09Infineon TechnologiesMOSFET N-CH 55V 80A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 52A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 105nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 2620pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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BSC889N03LS GInfineon TechnologiesMOSFET N-CH 30V 45A TDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 28W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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IPD035N06L3 GInfineon TechnologiesMOSFET N-CH 60V 90A TO252-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 90A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 79nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 90A  ·  Input Capacitance (Ciss) @ Vds: 13000pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 167W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BSS209PW L6327Infineon TechnologiesMOSFET P-CH 20V 580MA SOT-323
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 550 mOhm @ 580mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 1.38nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 580mA  ·  Input Capacitance (Ciss) @ Vds: 89.9pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 520mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-323
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IPB14N03LATInfineon TechnologiesMOSFET N-CH 25V 30A D2PAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 8.3nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1043pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 46W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IPP041N04N GInfineon TechnologiesMOSFET N-CH 40V 80A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 56nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 94W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPP04N03LAIPP04N03LAInfineon TechnologiesMOSFET N-CH 25V 80A TO-220AB
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 55A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 3877pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 107W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
from 1,49
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BSC079N03SGBSC079N03SGInfineon TechnologiesMOSFET N-CH 30V 40A TDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 40A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 2230pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 60W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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IPP06CN10N GInfineon TechnologiesMOSFET N-CH 100V 100A TO-220
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 100A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 139nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 9200pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 214W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPP80N06S2-08Infineon TechnologiesMOSFET N-CH 55V 80A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 8 mOhm @ 58A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 96nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 2860pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 215W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3
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IPP04CN10NGIPP04CN10NGInfineon TechnologiesMOSFET N-CH 100V 100A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 100A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 210nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 13800pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
from 2,85
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IPD088N06N3 GInfineon TechnologiesMOSFET N-CH 60V 50A TO252-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 3900pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 71W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BSZ050N03LSGBSZ050N03LSGInfineon TechnologiesMOSFET N-CH 30V 40A TSDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 2800pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 50W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-TSDSON
from 0,36
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SPB100N08S2-07SPB100N08S2-07Infineon TechnologiesMOSFET N-CH 75V 100A D2PAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 66A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 6020pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BSC265N10LSF GInfineon TechnologiesMOSFET N-CH 100V 40A TDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 1600pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 78W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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IPD30N03S2L-07Infineon TechnologiesMOSFET N-CH 30V 30A TO252-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 68nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 136W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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SPP80N04S2L-03Infineon TechnologiesMOSFET N-CH 40V 80A TO-220
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 213nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 7930pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPB03N03LA GIPB03N03LA GInfineon TechnologiesMOSFET N-CH 25V 80A TO-263
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 55A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 57nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 7027pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IPD036N04L GInfineon TechnologiesMOSFET N-CH 40V 90A TO252-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 90A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 78nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 90A  ·  Input Capacitance (Ciss) @ Vds: 6300pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 94W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BSZ105N04NSGBSZ105N04NSGInfineon TechnologiesMOSFET N-CH 40V 40A TSDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-TSDSON
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IPP037N06L3 GInfineon TechnologiesMOSFET N-CH 60V 90A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 79nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 90A  ·  Input Capacitance (Ciss) @ Vds: 13000pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 167W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3
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BSR802N L6327Infineon TechnologiesMOSFET N-CH 20V 3.7A SC-59
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.7A, 2.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 4.7nC @ 2.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.7A  ·  Input Capacitance (Ciss) @ Vds: 1447pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-59
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BSS306N L6327Infineon TechnologiesMOSFET N-CH 30V 2.3A SOT-23
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 1.5nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.3A  ·  Input Capacitance (Ciss) @ Vds: 275pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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IPP147N03L GIPP147N03L GInfineon TechnologiesMOSFET N-CH 30V 20A TO-220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1000pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 31W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3
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