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IPD036N04L G — MOSFET N-CH 40V 90A TO252-3

ManufacturerInfineon Technologies
Harmful substancesRoHS   Lead-free
SeriesOptiMOS™
Rds On (Max) @ Id, Vgs3.6 mOhm @ 90A, 10V
Drain to Source Voltage (Vdss)40V
Gate Charge (Qg) @ Vgs78nC @ 10V
Current - Continuous Drain (Id) @ 25° C90A
Input Capacitance (Ciss) @ Vds6300pF @ 20V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max94W
Mounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63
Found under nameSP000387945
Analogous by characteristics
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SPB80N06S2L-H5SPB80N06S2L-H5Infineon TechnologiesMOSFET N-CH 55V 80A D2PAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 190nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 6640pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IPD26N06S2L-35Infineon TechnologiesMOSFET N-CH 55V 30A TO252-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 35 mOhm @ 13A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 621pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 68W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BSO064N03SInfineon TechnologiesMOSFET N-CH 30V 12A DSO-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 3620pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.56W  ·  Mounting Type: Surface Mount  ·  Package / Case: DSO-8
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BSC035N04LS GInfineon TechnologiesMOSFET N-CH 40V 100A TDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 64nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 5100pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 69W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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IPU04N03LAInfineon TechnologiesMOSFET N-CH 25V 50A IPAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 5199pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 115W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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SPI80N08S2-07RInfineon TechnologiesMOSFET N-CH 75V 80A I2PAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 185nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 5830pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IPD048N06L3 GInfineon TechnologiesMOSFET N-CH 60V 90A TO252-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 90A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 90A  ·  Input Capacitance (Ciss) @ Vds: 8400pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 115W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IPP100N04S3-03Infineon TechnologiesMOSFET N-CH 40V 100A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 145nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 9600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 214W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3
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IPP100N06S2-05Infineon TechnologiesMOSFET N-CH 55V 100A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 170nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 5110pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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BSZ160N10NS3 GInfineon TechnologiesMOSFET N-CH 100V 40A TSDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 63W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-TSDSON
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BSO052N03SBSO052N03SInfineon TechnologiesMOSFET N-CH 30V 14A DSO-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 43nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 5530pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.56W  ·  Mounting Type: Surface Mount  ·  Package / Case: DSO-8
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IPP80N06S2-H5Infineon TechnologiesMOSFET N-CH 55V 80A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 155nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 4400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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BSR302N L6327Infineon TechnologiesMOSFET N-CH 30V 3.7A SC-59
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.7A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6.6nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.7A  ·  Input Capacitance (Ciss) @ Vds: 750pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-59
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IPBH6N03LAIPBH6N03LAInfineon TechnologiesMOSFET N-CH 25V 50A D2PAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 2390pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 71W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IPB090N06N3 GInfineon TechnologiesMOSFET N-CH 60V 50A TO263-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 9 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 36nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 2900pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 71W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BSC883N03MS GInfineon TechnologiesMOSFET N-CH 30V 98A TDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 98A  ·  Input Capacitance (Ciss) @ Vds: 4300pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 57W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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BSC019N04NS GInfineon TechnologiesMOSFET N-CH 40V 100A TDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 1.9 mohm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 108nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 8800pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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IPP050N06N GIPP050N06N GInfineon TechnologiesMOSFET N-CH 60V 100A TO-220
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 100A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 167nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 6100pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPP093N06N3 GInfineon TechnologiesMOSFET N-CH 60V 50A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 36nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 2900pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 71W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3
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IPP03N03LB GIPP03N03LB GInfineon TechnologiesMOSFET N-CH 30V 80A TO-220
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 55A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 59nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 7624pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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SPD100N03S2L04TInfineon TechnologiesMOSFET N-CH 30V 100A DPAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 89.7nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 3320pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (4 leads + tab)
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SPP80N06S2L-05Infineon TechnologiesMOSFET N-CH 55V 80A TO-220
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 230nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 7530pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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BSC120N03MSGBSC120N03MSGInfineon TechnologiesMOSFET N-CH 30V 39A TDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 39A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 28W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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IPI45N06S3L-13IPI45N06S3L-13Infineon TechnologiesMOSFET N-CH 55V 45A TO-262
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 26A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 75nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 3600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 65W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IPP16CN10N GIPP16CN10N GInfineon TechnologiesMOSFET N-CH 100V 53A TO-220
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 53A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 53A  ·  Input Capacitance (Ciss) @ Vds: 3220pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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