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IPP04CN10NG

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IPP04CN10NG — MOSFET N-CH 100V 100A TO220-3

ManufacturerInfineon Technologies
Harmful substancesRoHS   Lead-free
SeriesOptiMOS™
Rds On (Max) @ Id, Vgs4.2 mOhm @ 100A, 10V
Drain to Source Voltage (Vdss)100V
Gate Charge (Qg) @ Vgs210nC @ 10V
Current - Continuous Drain (Id) @ 25° C100A
Input Capacitance (Ciss) @ Vds13800pF @ 50V
FET PolarityN-Channel
FET FeatureStandard
Power - Max300W
Mounting TypeThrough Hole
Package / CaseTO-220
Found under nameIPP04CN10NGIN, IPP04CN10NGXK, SP000311499
Analogous by characteristics
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BSO4410BSO4410Infineon TechnologiesMOSFET N-CH 30V 11.1A 8-SOIC
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.1A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 11.1A  ·  Input Capacitance (Ciss) @ Vds: 1280pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC
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IPP080N03L GInfineon TechnologiesMOSFET N-CH 30V 50A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 47W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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BSC110N06NS3 GInfineon TechnologiesMOSFET N-CH 60V 50A TDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 2700pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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IPB034N03L GIPB034N03L GInfineon TechnologiesMOSFET N-CH 30V 80A TO-263-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 51nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 5300pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 94W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IPD082N10N3 GInfineon TechnologiesMOSFET N-CH 100V 80A TO252-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 73A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 3980pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BSC080P03LS GInfineon TechnologiesMOSFET P-CH 30V 30A TDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 122.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 6140pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 89W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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SPP42N03S2L13Infineon TechnologiesMOSFET N-CH 30V 42A TO-220AB
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 21A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 30.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 42A  ·  Input Capacitance (Ciss) @ Vds: 1130pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 83W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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BSZ058N03MSGBSZ058N03MSGInfineon TechnologiesMOSFET N-CH 30V 40A TSDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 3100pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-TSDSON
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IPS03N03LB GInfineon TechnologiesMOSFET N-CH 30V 90A IPAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 60A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 90A  ·  Input Capacitance (Ciss) @ Vds: 5200pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 115W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
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BSC200P03LS GInfineon TechnologiesMOSFET P-CH 30V 12.5A TDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 20 mOhm @ 12.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 48.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12.5A  ·  Input Capacitance (Ciss) @ Vds: 2430pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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IPI100P03P3L-04Infineon TechnologiesMOSFET P-CH 30V 100A TO262-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 9300pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 200W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IPP057N08N3 GInfineon TechnologiesMOSFET N-CH 80V 80A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 80V  ·  Gate Charge (Qg) @ Vgs: 69nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 4750pF @ 40V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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SPU30N03S2-08Infineon TechnologiesMOSFET N-CH 30V 30A IPAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 47nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 2170pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IPP100N04S2L-03Infineon TechnologiesMOSFET N-CH 40V 100A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 230nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 6000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPD70N10S3L-12Infineon TechnologiesMOSFET N-CH 100V 70A TO252-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 70A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 77nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 5550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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SPD50P03L GSPD50P03L GInfineon TechnologiesMOSFET P-CH 30V 50A TO-252
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 126nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 6880pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (4 leads + tab)
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IPI03N03LAInfineon TechnologiesMOSFET N-CH 25V 80A I2PAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3 mOhm @ 55A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 57nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 7027pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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BSZ100N03MSGBSZ100N03MSGInfineon TechnologiesMOSFET N-CH 30V 40A TDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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IPP77N06S3-09IPP77N06S3-09Infineon TechnologiesMOSFET N-CH 55V 77A TO-220
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 39A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 103nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 77A  ·  Input Capacitance (Ciss) @ Vds: 5335pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 107W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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BSC100N03LSGBSC100N03LSGInfineon TechnologiesMOSFET N-CH 30V 44A TDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 44A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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IPP80N06S2-09Infineon TechnologiesMOSFET N-CH 55V 80A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 2360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPP085N06L GIPP085N06L GInfineon TechnologiesMOSFET N-CH 60V 80A TO-220
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 80A. 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 104nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 3500pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 188W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPS13N03LA GInfineon TechnologiesMOSFET N-CH 25V 30A IPAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 8.3nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1043pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 46W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
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IPB011N04L GInfineon TechnologiesMOSFET N-CH 40V 180A TO263-7
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 100A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 346nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 180A  ·  Input Capacitance (Ciss) @ Vds: 29000pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 250W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (7 leads + tab)
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IPI80N08S2-07Infineon TechnologiesMOSFET N-CH 75V 80A TO262-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 180nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 4700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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