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STB7NK80Z-1 — MOSFET N-CH 800V 5.2A I2PAK

Manufacturer: STMicroelectronics  •  RoHS/pb-free: RoHS   Pb-free  •  Series: SuperMESH™  •  Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2.6A, 10V  •  Drain to Source Voltage (Vdss): 800V  •  Gate Charge (Qg) @ Vgs: 56nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 5.2A  •  Input Capacitance (Ciss) @ Vds: 1138pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 125W  •  Mounting Type: Through Hole  •  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
Datasheet
  • STB7NK80Z-1 - N-CHANNEL800V-1.5 Ohm- 5.2A TO-220 / TO-220FP / I2PAK / D2PAK Zener-Protected SuperMESHTMPower MOSFET
  • stb7nk80z-1.pdf on site st.com
Cross-referenceSTB7NK80Z-1, STB7NK80Z-1, STB7NK80Z-1, STB7NK80Z-1, STB7NK80Z-1   Technical Specification »

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    ООО "Аркион"STB7NK80Z-1
    от 4-х недель; , Package: : N/A; , Min order: : 1; , D/c: : 23+    		STMicroelectronics 15000
    AN-CHIPFresh data!STB7NK80Z-1
    микросхема интегральная электронная MOSFET N-CH 800V 5.2A I2PAK 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21    		STMicroelectronics 27233
    NTK MostekSTB7NK80Z-1 /STM/ moq>10000
    При стоимости строки от $1000 Вы можете запросить специальную цену! Подробнее    		mult: 149.25 RUB
    KontestSTB7NK80Z-1
    Подробнее    		ST MICROELECTRONICS
    STB7NK80Z-1
    Подробнее    		STMicroelectronics
    "SINERGY-DISTRIBUTION" LLCSTB7NK80Z-1
    MOSFET N-CH 800V 5.2A I2PAK    		STMicroelectronics
    ООО "Интегральные схемы"STB7NK80Z-1 from 7 days
    AspectSTB7NK80Z-1 from 7 days


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    "SINERGY-DISTRIBUTION" LLCSt. Petersburg+7 (812) 409-49-130  1 Hide
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