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FDS2672 — MOSFET N-CH 200V 3.9A 8-SOIC

Manufacturer: Fairchild Semiconductor  •  RoHS/pb-free: RoHS   Pb-free  •  Please note: Mold Compound Change 12 dec 2007  •  Series: UltraFET™  •  Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.9A, 10V  •  Drain to Source Voltage (Vdss): 200V  •  Gate Charge (Qg) @ Vgs: 46nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 3.9A  •  Input Capacitance (Ciss) @ Vds: 2535pF @ 100V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1W  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC (3.9mm Width)  •  Other PartNo: FDS2672TR
Datasheet
  • FDS2672 - N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70m
  • FDS2672.pdf on site fairchildsemi.com

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