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IRFR210

- Dimensional Drawing
- Dimensional Drawing

IRFR210 — MOSFET N-CH 200V 2.6A DPAK

ManufacturerVishay/Siliconix
Rds On (Max) @ Id, Vgs1.5 Ohm @ 1.6A, 10V
Drain to Source Voltage (Vdss)200V
Gate Charge (Qg) @ Vgs8.2nC @ 10V
Current - Continuous Drain (Id) @ 25° C2.6A
Input Capacitance (Ciss) @ Vds140pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max2.5W
Mounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63
Found under name*IRFR210
Analogous by characteristics
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IRF630STRLIRF630STRLVishay/SiliconixMOSFET N-CH 200V 9A D2PAK
Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 43nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI7812DN-T1-GE3Vishay/SiliconixMOSFET N-CH 75V 16A 1212-8
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.2A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 840pF @ 35V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 52W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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SI7107DN-T1-GE3SI7107DN-T1-GE3Vishay/SiliconixMOSFET P-CH 20V 9.8A 1212-8
Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 15.3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9.8A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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IRFL214TRPBFIRFL214TRPBFVishay/SiliconixMOSFET N-CH 250V 790MA SOT223
Rds On (Max) @ Id, Vgs: 2 Ohm @ 470mA, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 8.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 790mA  ·  Input Capacitance (Ciss) @ Vds: 140pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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IRLZ24IRLZ24Vishay/SiliconixMOSFET N-CH 60V 17A TO-220AB
Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 870pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRF840SIRF840SVishay/SiliconixMOSFET N-CH 500V 8A D2PAK
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 63nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFR11N25DVishay/SiliconixMOSFET N-CH 250V DPAK
Drain to Source Voltage (Vdss): 250V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRFR310TRPBFIRFR310TRPBFVishay/SiliconixMOSFET N-CH 400V 1.7A DPAK
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 170pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.1A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.1A  ·  Input Capacitance (Ciss) @ Vds: 770pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF9Z20STRRIRF9Z20STRRVishay/SiliconixMOSFET P-CH 50V 9.7A D2PAK
Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.7A  ·  Input Capacitance (Ciss) @ Vds: 480pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI3467DV-T1-E3SI3467DV-T1-E3Vishay/SiliconixMOSFET P-CH 20V 3.8A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.8A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.14W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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IRLZ44IRLZ44Vishay/SiliconixMOSFET N-CH 60V 50A TO-220AB
Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 3300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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SI7748DP-T1-GE3SI7748DP-T1-GE3Vishay/SiliconixMOSFET N-CH 30V 50A PPAK 8SOIC
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 92nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 3770pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 56W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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IRFPC60PBFIRFPC60PBFVishay/SiliconixMOSFET N-CH 600V 16A TO-247AC
Rds On (Max) @ Id, Vgs: 400 mOhm @ 9.6A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 210nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 3900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
from 4,20
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SI4386DY-T1-GE3SI4386DY-T1-GE3Vishay/SiliconixMOSFET N-CH 30V 11A 8-SOIC
Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.47W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI4845DY-T1-E3SI4845DY-T1-E3Vishay/SiliconixMOSFET P-CH 20V 2.7A 8-SOIC
Rds On (Max) @ Id, Vgs: 210 mOhm @ 2A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 4.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.7A  ·  Input Capacitance (Ciss) @ Vds: 312pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 2.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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IRFBC30ALVishay/SiliconixMOSFET N-CH 600V 3.6A TO-262
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.6A  ·  Input Capacitance (Ciss) @ Vds: 510pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IRFPF50IRFPF50Vishay/SiliconixMOSFET N-CH 900V 6.7A TO-247AC
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.7A  ·  Input Capacitance (Ciss) @ Vds: 2900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFBC40LPBFIRFBC40LPBFVishay/SiliconixMOSFET N-CH 600V 6.2A TO-262
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.2A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IRF644NSIRF644NSVishay/SiliconixMOSFET N-CH 250V 14A D2PAK
Rds On (Max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 54nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1060pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFR220TRLVishay/SiliconixMOSFET N-CH 200V 4.8A DPAK
Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.8A  ·  Input Capacitance (Ciss) @ Vds: 260pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRFBG30SIRFBG30SVishay/SiliconixMOSFET N-CH 1000V 3.1A D2PAK
Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.1A  ·  Input Capacitance (Ciss) @ Vds: 980pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFP064IRFP064Vishay/SiliconixMOSFET N-CH 60V 70A TO-247AC
Rds On (Max) @ Id, Vgs: 9 mOhm @ 78A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 190nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 7400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRF730ASTRRIRF730ASTRRVishay/SiliconixMOSFET N-CH 400V 5.5A D2PAK
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI7720DN-T1-GE3SI7720DN-T1-GE3Vishay/SiliconixMOSFET N-CH 30V 12A 1212-8
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1790pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 52W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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