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Discrete Semiconductor Products  ·  MOSFETs - Single
 

IRFBC30AL — MOSFET N-CH 600V 3.6A TO-262

ManufacturerVishay/Siliconix
Rds On (Max) @ Id, Vgs2.2 Ohm @ 2.2A, 10V
Drain to Source Voltage (Vdss)600V
Gate Charge (Qg) @ Vgs23nC @ 10V
Current - Continuous Drain (Id) @ 25° C3.6A
Input Capacitance (Ciss) @ Vds510pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max74W
Mounting TypeThrough Hole
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
Found under name*IRFBC30AL
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
IRFRC20TRRPBFVishay/SiliconixMOSFET N-CH 600V 2A DPAK
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRFRC20TRLVishay/SiliconixMOSFET N-CH 600V 2A DPAK
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 1,77Additional information
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SI1472DH-T1-E3SI1472DH-T1-E3Vishay/SiliconixMOSFET N-CH 30V 5.6A SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 57 mOhm @ 4.2A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.6A  ·  Input Capacitance (Ciss) @ Vds: 380pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,30
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IRFP340IRFP340Vishay/SiliconixMOSFET N-CH 400V 11A TO-247AC
Rds On (Max) @ Id, Vgs: 550 mOhm @ 6.6A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 62nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
from 6,19Additional information
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IRFP244IRFP244Vishay/SiliconixMOSFET N-CH 250V 15A TO-247AC
Rds On (Max) @ Id, Vgs: 280 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 63nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
from 6,34Additional information
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IRFPG50IRFPG50Vishay/SiliconixMOSFET N-CH 1000V 6.1A TO-247AC
Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.6A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 190nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.1A  ·  Input Capacitance (Ciss) @ Vds: 2800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
from 10,58Additional information
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IRF9640LVishay/SiliconixMOSFET P-CH 200V 11A TO-262
Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 3W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 3,25Additional information
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IRFR010TRRVishay/SiliconixMOSFET N-CH 50V 8.2A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.2A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 0,47Additional information
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IRFBC30ASIRFBC30ASVishay/SiliconixMOSFET N-CH 600V 3.6A D2PAK
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.6A  ·  Input Capacitance (Ciss) @ Vds: 510pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFPS35N50LPBFIRFPS35N50LPBFVishay/SiliconixMOSFET N-CH 500V 34A SUPER247
Rds On (Max) @ Id, Vgs: 145 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 230nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 5580pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Through Hole  ·  Package / Case: Super-247
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IRFI730GIRFI730GVishay/SiliconixMOSFET N-CH 400V 3.7A TO220FP
Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.1A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.7A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
from 2,23Additional information
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SI4427BDY-T1-E3SI4427BDY-T1-E3Vishay/SiliconixMOSFET P-CH 30V 9.7A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 12.6A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9.7A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 1,03
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IRFD210IRFD210Vishay/SiliconixMOSFET N-CH 200V 600MA 4-DIP
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 360mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 8.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 600mA  ·  Input Capacitance (Ciss) @ Vds: 140pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
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IRF730AIRF730AVishay/SiliconixMOSFET N-CH 400V 5.5A TO-220AB
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRFBC20STRRIRFBC20STRRVishay/SiliconixMOSFET N-CH 600V 2.2A D2PAK
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.2A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFR9220TRRPBFVishay/SiliconixMOSFET P-CH 200V 3.6A DPAK
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.6A  ·  Input Capacitance (Ciss) @ Vds: 340pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRLZ14PBFIRLZ14PBFVishay/SiliconixMOSFET N-CH 60V 10A TO-220AB
Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 8.4nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 43W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRFR9220TRLVishay/SiliconixMOSFET P-CH 200V 3.6A DPAK
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.6A  ·  Input Capacitance (Ciss) @ Vds: 340pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRF5801Vishay/SiliconixMOSFET N-CH 200V 600MA 6-TSOP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 360mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 3.9nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 600mA  ·  Input Capacitance (Ciss) @ Vds: 88pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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IRLR014TRRVishay/SiliconixMOSFET N-CH 60V 7.7A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 8.4nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.7A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRL520SIRL520SVishay/SiliconixMOSFET N-CH 100V 9.2A D2PAK
Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 5V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 9.2A  ·  Input Capacitance (Ciss) @ Vds: 490pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 1,31Additional information
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SI7478DP-T1-GE3SI7478DP-T1-GE3Vishay/SiliconixMOSFET N-CH 60V 15A PPAK 8SOIC
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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IRFU220Vishay/SiliconixMOSFET N-CH 200V 4.8A I-PAK
Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.8A  ·  Input Capacitance (Ciss) @ Vds: 260pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IRFIZ44GIRFIZ44GVishay/SiliconixMOSFET N-CH 60V 30A TO220FP
Rds On (Max) @ Id, Vgs: 28 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 48W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
from 3,01Additional information
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IRFRC20TRPBFIRFRC20TRPBFVishay/SiliconixMOSFET N-CH 600V 2A DPAK
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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