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IRFD210 — MOSFET N-CH 200V 600MA 4-DIP

Manufacturer: Vishay/Siliconix  •  Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 360mA, 10V  •  Drain to Source Voltage (Vdss): 200V  •  Gate Charge (Qg) @ Vgs: 8.2nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 600mA  •  Input Capacitance (Ciss) @ Vds: 140pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 1W  •  Mounting Type: Through Hole  •  Package / Case: 4-DIP, HVMDIP  •  Other PartNo: *IRFD210
Datasheet
  • IRFD210 - 0.6a, 200v, 1.500 Ohm, N-channel Power Mosfet
  • IRFD210 - Power MOSFET (Vdss=-100V, Rds (on) =1.2ohm, Id=-0.70A)
  • doc on site vishay.com

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    Suppliers of «IRFD210»

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