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2SK4111(Q,T)
— MOSFET N-CH 600V 10A SC-67
Discrete Semiconductor Products
»
MOSFETs - Single
Manufacturer: Toshiba
•
RoHS/pb-free:
RoHS
Pb-free
•
Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
•
Drain to Source Voltage (Vdss): 600V
•
Gate Charge (Qg) @ Vgs: 42nC @ 10V
•
Current - Continuous Drain (Id) @ 25° C: 10A
•
Input Capacitance (Ciss) @ Vds: 1500pF @ 25V
•
FET Polarity: N-Channel
•
FET Feature: Standard
•
Power - Max: 45W
•
Mounting Type: Through Hole
•
Package / Case: 2-10R1B
Datasheet
2SK4111_en_datasheet_080822.pdf
on site co.jp
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