Features | Manufacturer: Toshiba • RoHS/pb-free: RoHS Pb-free • Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V • Drain to Source Voltage (Vdss): 600V • Gate Charge (Qg) @ Vgs: 42nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 10A • Input Capacitance (Ciss) @ Vds: 1500pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 45W • Mounting Type: Through Hole • Package / Case: 2-10R1B |
Datasheet | |
Suppliers of «2SK4111(Q,T)» | |
Part No | Manufacturer | Price | Stock | AN-CHIP, St. Petersburg +7 (812) 922-25-39, order@an-chip.ru | | 2SK4111(Q,T) (микросхема интегральная электронная MOSFET N-CH 600V 10A TO220NIS 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21) | Toshiba | – | 34898 | Kontest, Moscow +7 (495) 150-88-73, Fax: (495) 150-88-73, zakaz@kontest.ru | | 2SK4111(Q,T) (Подробнее) | Toshiba | – | – | ООО "Интегральные схемы", St. Petersburg +7 (812) 448-53-82, info@ic-ltd.ru | | 2SK4111(Q,T) | – | – | from 7 days | Aspect, St. Petersburg +7 (812) 309-89-32, info@aspect.spb.su | | 2SK4111(Q,T) | – | – | from 7 days |
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