Manufacturer: Vishay/Siliconix  •  Series: HEXFET®  •  Rds On (Max) @ Id, Vgs: 42 mOhm @ 13A, 10V  •  Drain to Source Voltage (Vdss): 150V  •  Gate Charge (Qg) @ Vgs: 200nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 21A  •  Input Capacitance (Ciss) @ Vds: 2400pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 48W  •  Mounting Type: Through Hole  •  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB