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Discrete Semiconductor Products  ·  MOSFETs - Single
 
SI7113DN-T1-E3

- Dimensional Drawing

SI7113DN-T1-E3 — MOSFET P-CH 100V 13.2A 1212-8

ManufacturerVishay/Siliconix
Harmful substancesRoHS   Lead-free
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs134 mOhm @ 4A, 10V
Drain to Source Voltage (Vdss)100V
Gate Charge (Qg) @ Vgs55nC @ 10V
Current - Continuous Drain (Id) @ 25° C13.2A
Input Capacitance (Ciss) @ Vds1480pF @ 50V
FET PolarityP-Channel
FET FeatureStandard
Power - Max52W
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8
Found under nameSI7113DN-T1-E3DKR
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
SI3467DV-T1-E3SI3467DV-T1-E3Vishay/SiliconixMOSFET P-CH 20V 3.8A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.8A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.14W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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SI7136DP-T1-E3SI7136DP-T1-E3Vishay/SiliconixMOSFET N-CH 20V 30A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 78nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 3380pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 39W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
from 1,66
from 3,99		Additional information
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SI7374DP-T1-E3SI7374DP-T1-E3Vishay/SiliconixMOSFET N-CH 30V 24A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 23.8A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 122nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 5500pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 56W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
from 1,71
from 3,99		Additional information
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SI7636DP-T1-E3SI7636DP-T1-E3Vishay/SiliconixMOSFET N-CH 30V 17A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 5600pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
from 1,01
from 1,09		Additional information
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SI7386DP-T1-E3SI7386DP-T1-E3Vishay/SiliconixMOSFET N-CH 30V 12A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 19A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
from 1,00
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SI1488DH-T1-E3SI1488DH-T1-E3Vishay/SiliconixMOSFET N-CH 20V 6.1A SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 49 mOhm @ 4.6A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 0.01nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 6.1A  ·  Input Capacitance (Ciss) @ Vds: 530pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,28
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SI4848DY-T1-E3SI4848DY-T1-E3Vishay/SiliconixMOSFET N-CH 150V 2.7A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.7A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI2325DS-T1-E3SI2325DS-T1-E3Vishay/SiliconixMOSFET P-CH 150V 530MA SOT23-3
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 530mA  ·  Input Capacitance (Ciss) @ Vds: 510pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 750mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
from 0,35
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SI1403BDL-T1-E3SI1403BDL-T1-E3Vishay/SiliconixMOSFET P-CH 20V 1.4A SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 4.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.4A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 568mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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SI7476DP-T1-E3SI7476DP-T1-E3Vishay/SiliconixMOSFET N-CH 40V 15A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 177nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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SUM33N20-60P-E3SUM33N20-60P-E3Vishay/SiliconixMOSFET N-CH 200V 33A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 59 mOhm @ 20A, 15V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 113nC @ 15V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 2735pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.12W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI8402DB-T1-E1SI8402DB-T1-E1Vishay/SiliconixMOSFET N-CH 20V 5.3A 2X2 4-MFP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 37 mOhm @ 1A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.3A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.47W  ·  Mounting Type: Surface Mount  ·  Package / Case: 4-MICRO FOOT®CSP
from 0,87
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SIE800DF-T1-E3SIE800DF-T1-E3Vishay/SiliconixMOSFET N-CH 30V 50A 10-POLARPAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 1600pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 104W  ·  Mounting Type: Surface Mount  ·  Package / Case: 10-PolarPAK® (S)
from 1,03
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SI9424BDY-T1-E3SI9424BDY-T1-E3Vishay/SiliconixMOSFET P-CH 20V 5.6A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.6A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI3499DV-T1-E3SI3499DV-T1-E3Vishay/SiliconixMOSFET P-CH 8V 5.3A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 42nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.3A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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SI5856DC-T1-E3SI5856DC-T1-E3Vishay/SiliconixMOSFET N-CH 20V 4.4A 1206-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 7.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 4.4A  ·  FET Polarity: N-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 1206-8 ChipFET™
from 0,51
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SI4378DY-T1-E3SI4378DY-T1-E3Vishay/SiliconixMOSFET N-CH 20V 19A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 25A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 8500pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.6W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 1,68
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SI4401BDY-T1-E3SI4401BDY-T1-E3Vishay/SiliconixMOSFET P-CH 40V 8.7A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 14 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 8.7A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI7806ADN-T1-E3SI7806ADN-T1-E3Vishay/SiliconixMOSFET N-CH 30V 9A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
from 0,80
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SI1469DH-T1-E3SI1469DH-T1-E3Vishay/SiliconixMOSFET P-CH 20V 2.7A SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 8.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.7A  ·  Input Capacitance (Ciss) @ Vds: 470pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.78W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,32
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SI8401DB-T1-E1SI8401DB-T1-E1Vishay/SiliconixMOSFET P-CH 20V 3.6A 2X2 4-MFP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 65 mOhm @ 1A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.6A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.47W  ·  Mounting Type: Surface Mount  ·  Package / Case: 4-MICRO FOOT®CSP
from 1,30
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SI5482DU-T1-E3Vishay/SiliconixMOSFET N-CH 30V 12A PPAK CHIPFET
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 51nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1610pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 31W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® ChipFET Single
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SI7850DP-T1-E3SI7850DP-T1-E3Vishay/SiliconixMOSFET N-CH 60V 6.2A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 22 mOhm @ 10.3A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.2A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
from 0,80
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SI7491DP-T1-E3SI7491DP-T1-E3Vishay/SiliconixMOSFET P-CH 30V 11A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 85nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
from 1,21
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SI7409ADN-T1-E3SI7409ADN-T1-E3Vishay/SiliconixMOSFET P-CH 30V 7A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 19 mOhm @ 11A, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
from 0,98
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